admeta advanced
metallization
conference

Conference Program

Program at a Glance

Conference Program

October 8, 2026

Session 1

Opening, Award Ceremony and Plenary Session

Chairperson
Takashi Matsumoto, Executive Vice Chair (Program)
Hiroto Ohtake,Program Committee Vice Chair
Time Program
10:00–10:10
Welcome Address
Welcome Address
Noriaki Matsunaga, Organizing Committee Chair
10:10–10:30
Award Ceremony
Award Ceremony
Takayasu Saito, Assistant Organizing Committee Chair (Previous Year’s Chair)
10:30–11:10
Plenary Talk : Artificial Intelligence
Making AI Real: From infrastructure to SolutionsOnline
Chetan Gupta
Rackspace Technologies
11:25–12:05
Plenary Talk : Artificial Intelligence
Implementing AI Accelerator in Advanced Node
Shinnichi Ouchi
AIST
12:05–12:45
Plenary Talk : Artificial Intelligence
Chips for AI, AI for chips: Redesigning AI from materials up
Daisuke Okanohara
Preferred Networks

Session 2

Advanced Interconnect

Chairperson
Kazunari Kurita, Program Committee Vice Chair
Keisuke Suzuki, Program Committee Vice Chair
Time Program
14:05–14:45
Keynote : Advanced CMOS Roadmap
The 3D Evolution in Transistor Architectures and its Impact on Advanced Metallization
Hans Mertens
imec
14:45–15:05
Oral Session
Impact of surface RuO2 formation on the electrical and structural stability of Ru thin films
○ Aiga Eguchi and Junichi Koike
Department of Materials Science, Tohoku University
15:05–15:25
Oral Session
Evaluation of Electrical Characteristics of MIM Capacitors with Interfaces Controlled by the Top Electrode Process
○ Yusuke Nakajima, T. Yoshino, T. Ishizaki, Y. Kagawa, T. Hirano
Sony Semiconductor Solutions Corporation

Session 3

Advanced Dry and Wet Processes

Chairperson
Hiroto Ohtake, Program Committee Vice Chair
Hidemi Suemori, Program Committee Member
Time Program
15:40–16:10
Invited Talk : Deposition, Etching
Depth-Controllable Passivation for Isotropic Etching and Advanced Profile Engineering
Tsubasa Imamura
HITACHI
16:10–16:30
Oral Session
N₂-Based Sequential Post-Etch Treatments: A Robust Solution Against TiN Metallic Residues
○ Nicolas Posseme1 , E.Davin2 , A.Artioli2 , J.Delbecque2 , J.Dubois1 , F.Gaucher3 , Ph. Brun1 , T.Chevolleau1 , O.Rigoutat3 and J.P. Oddou2
1Université Grenoble Alpes, 2STMicroelectronics, 3Lam Research
16:30–16:50
Oral Session
Silicon Etching by Hydrogen Iodide Plasma as New Gas Chemistry
○ Yusei Osada1 , Daisuke Ohori1*, Takuya Ozaki1 , Kazuhiko Endo1 Daisuke Shimizu2 and Hiroto Ohtake2
1Institute of Fluid Science, Tohoku University, 2Applied Materials Inc.

Session 4

Advanced Packaging I

Chairperson
Akihiro Shimizu, Program Committee Member
Naoko Kato, Financial Vice Chair / Program Committee Member
Time Program
17:05–17:35
Invited Talk : Bonding mechanism
Surface and interface design for reversible interconnection
Akitsu Shigetou
NIMS
17:35–17:55
Oral Session
Operando Strain Imaging of Silicon Dies in Advanced Semiconductor Packages by High-Energy Synchrotron X-ray Diffraction
○ Shinichi Ogawa, Kenji Tamasaku, Yoshinao Harada, Hidekazu Takano, Takashi Kameshima, Taito Osaka, and Takaki Hatsui
SPring-8 Center, RIKEN
17:55–18:15
Oral Session
A Methodology for Bond Strength Evaluation in Die-Level Fusion Bonding
○ Kenichi Ono, Ryuki Kusakabe, Shumpei Murakami, Marie Sano, Fumihiro Inoue
Yokohama National University

Poster Session

Poster Session

Chairperson
Keisuke Suzuki, Program Committee Vice Chair
Hidemi Suemori, Program Committee Vice Chair
Advanced Interconnects (P-01 – P-06)
Poster No. Title Presenter / Co-authors Affiliation
P-01 Room-Temperature Reduction of Cobalt Oxides by Vacuum Ultraviolet Irradiation in an H2/N2 atmosphere with H2O vapor ○ Akihiro Shimizu and Shinichi Endo Ushio Inc.
P-02 Area-selective Cu-filling into SiO2 via-hole on Ru using CuI-precursor ○ Takumi Nanba1 , Takashi Fuse2 and Satoshi Yamauchi1 1Quantum Beam Science & Technology, Ibaraki Univ., 2Tokyo Electron Ltd.
P-03 Realization of weak size dependence in electrical resistivity of topological semimetal Cu-Pd alloys ○ Masahiro Kushibiki1, Mihyeon Kim1 , and Yuta Saito1,2 1Department of Materials Science, Graduate School of Engineering, Tohoku University, 2Research Center for Green X-Tech, Tohoku University
P-04 Superconducting BEOL for Quantum Devices routing T.Chêne1, R. Segaud1, T.Chevolleau1, S. Minoret1, F. Gustavo2, F. Lefloch2, P. Gergaud1, M.Bouvier1, J. Garrione1, F.Nemouchi1 1Université Grenoble Alpes, CEA, LETI, 2Université Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS
P-05 Study on surface grinding for Cu and SiC substrates using polycrystalline diamond grinding tool ○ Haruto Konishi1, Takashi Fujita1 , Tomofumi Sawauchi1, Jun Nishiyama1 , Yasuo Izumi2 and Junji Watanabe3 1Dept. of Mechanical Engineering, Kindai Univ., 2Shin-Nihon Tech Inc., 3Former Dept. of Mechanical System Engineering, Kumamoto Univ.
P-06 A Novel Robust SiCOH Low-k Dielectric Breaking the Dielectric Constant(k)-Elastic Modulus Trade-off for Advanced BEOL Integration Zhiwen Chen, Fanyong Ran, Yuexiang Sun, Lingxiao Yu, Guoqing Yin and Xun Gu Advanced Micro-Fabrication Equipment Inc. (AMEC)
Advanced Dry and Wet Processes (P-07 – P-11)
Poster No. Title Presenter / Co-authors Affiliation
P-07 Effect of Hydrogen Flow Rate on Low-temperature and Catalyst-free Graphene Formation using High-Power Pulsed Sputtering and Plasma CVD ○ Akihiro Iwata1, Masanor1, Shinohara1 , and Takashi Matsumoto2 1Dept. of Electrical Engineer., Fukuoka Univ., 2Tokyo Electron Technology Solutions Limited
P-08 Polishing Characteristics of C60-absorbed nanodiamond on Difficult-to-Machine Substrates Under High Polishing Pressure ○ Komiya Kotaro1, Onishi Koki1 , Shinsuke Ishikawa2 , Ichiro Ota2, Mitsuteru Mutsuda2, Shigehiro Maeda2 , Tomoaki Mahiko2, Taro Yoshikawa2 , and Keisuke Suzuki1 1Kyushu Institute of Technology, 2Daicel Corporation
P-09 Plasma-Diagnostic Correlation with High-Rate Silicon Dry Etching Using an Atmospheric-Pressure SF₆ Plasma Jet Wei-Lun Li, Yu-Pin Lu, Yu Jie Wu and ○ Chun Huang Department of Chemical Engineering & Materials Science, Yuan Ze University
P-10 Micro-Grooving Technology for Cu Using High-Density Cutting Edges of PCD Blade ○ Tomofumi Sawauchi1, Takashi Fujita1 , Haruto Konishi1 , Jun Nishiyama1 , Junji Watanabe2 , Yasuo Izumi3 1Kindai University, 2Kumamoto University, 3Shin-Nihon Tech Inc.
P-11 Evaluation of Hydroxyl Groups on Glass Substrates for silane coupling pretreatment to enhance catalytic nuclei for plating ○ Saki Nishikawa, Kaito Katayama, Takeyasu Saito, Naoki Okamoto , Shinichi Endo Dept. of Chemical Engineering, Osaka Metropolitan Univ.
Atomic Layer Process (P-12 – P-17)
Poster No. Title Presenter / Co-authors Affiliation
P-12 Research on Improving Step Height Reduction Properties Using Polycarboxylic Acid ○ Hikaru Yokota, Keisuke Suzuki Takuya Honda, Midori Goda Kyushu Institute of Technology,NOF CORPORATION, Chidori Research Lab.
P-13 A Pumping-Assisted Nucleation Step for High-Quality Co Film Growth by Atomic Layer Deposition from Bis(diisopropylbutanamidinate)cobalt ○ Yohichiroh Numasawa1 , Masahiro Kawano2 , Hiroshi Sudoh1 , Yoshiharu Hasegawa1 , Ronel Christian Intal ROCA2 , Masato Ishikawa1 , Itaru Kamiya2 , Yoshio Ohshita2 , and Hideaki Machida1 1Gas-Phase Growth LTD., 2Toyota Technological Institute
P-14 ALD Molybdenum Carbide Sacrificial Seed Layer for Cu/Mo Hybrid Metallization Min Seok Kim, Eung Seon Yeon, and Jeong Hwan Han Department of Materials Science and Engineering, Seoul National University of Science and Technology
P-15 Atomic Layer Deposition of Ru Seed Layers for Cu Electroplating in Through-Glass Via Applications Min Young Park1, Ye Seul Kang1, Jin Yong Kim2, Min Soo Kim2, Sung Jin Kim2, Jeong Hwan Han1 1Dept. of Materials Science and Engineering, Seoul National University of Science and Technology (Seoultech), 2KCC Central Research Institute
P-16 Effect of Vacuum Ultraviolet Light Irradiation on Deposition Behavior during Atomic Layer Deposition using Metal Alkoxide So Kumano , Mika Kawamoto , Takashi Hirotani, Shinichi Endo, Takeyasu Saito and Naoki Okamoto Dept. of Chemical Engineering, Graduate School of Engineering, Osaka Metropolitan Univ.
P-17 Plasma Enhanced Atomic Layer Deposition of Cu Seed Layer for Conformal Electroplating in Advanced Packaging Junzhou Long1 ,Yuan Li2 , Xuzhong Cong3 , Yufeng Zhuang3 , Shuliang Lv3 and Xun Gu3 1School of Mechanical Science and Engineering, Huazhong University of Science and Technology, 2School of Microelectronics, State Key Laboratory of Integrated Chips and Systems, Fudan University, 3Advanced Micro-Fabrication Equipment Inc.
Materials Science and Technology (P-18 – P-23)
Poster No. Title Presenter / Co-authors Affiliation
P-18 Study on High-Speed Polishing Methods using Implant CMP ○Sota Ueda1 , Yuya Uchida2 , Akira Sada2, Taido Kurauchi2, Takeshi Matsumoto2 and Keisuke Suzuki1 1Kyushu Institute of Technology, 2Nissin Ion Equipment Co., Ltd.
P-19 Effects of Powder Configuration in Ag–Cu–Ti Brazing Pastes on Interfacial Microstructure and Joint Characteristics of AMB Substrates ○Yun-Chan Kim1,2, Dong-Yurl Yu1, Junhyuk Son1 , Sang Eun Han1 , Eunsuk Yoon3, Dongjin Byun2 and Junghwan Bang1 1Regional Industry Innovation Department, Korea Institute of Industrial Technology (KITECH), 2Department of Materials Science and Engineering, Korea University, 3ntegration of People & Technology (IPT)
P-20 Development of Aluminum Nitride Thin Film Deposition Process for Heat Spreader Applications ○ Kazuyuki Sueyoshi, Yusuke Ujihara, Masaki Hasegawa, Toru Kikuchi, Shunsuke Sasaki Institute of Advanced Technology, ULV AC, Inc.
P-21 Dissolvable Positive-Photoresist Templates for Stress-Free Replication of High-Aspect-Ratio Nanoimprint Structures ○ Shuo Chen , Yue Zhang , Hao Cao , Chengqun Gui School of Integrated Circuits, Wuhan University
P-22 ALD-Grown Anisotropic PtCoO₂ Thin Films for Narrow-Dimension Interconnects Joonho Moon and ○ Kiyoung Lee Department of Materials Science and Engineering, Hongik University
P-23 Buffer-Layer-Free c-axis aligned Kagome-Metal CoSn Thin Films toward Via interconnects ○ Youngeun Joo1 , Sungmin Jung1,2 , Gayun Kim1, Seung-heon Chris Baek2 , and Kiyoung Lee1 1Department of Materials Science and Engineering, Hongik University, 2Center for Semiconductor Technology
Advanced Packaging (P-24 – P-27)
Poster No. Title Presenter / Co-authors Affiliation
P-24 Grain Coarsening Behavior in Electrodeposited Cu for Low-Temperature Hybrid Bonding ○ Masahiro Sawa1, Jinta Nampo1, Tatsuki Sekine1 Murugesan Mariappan1 and Takafumi Fukushima2 1JCU CORPORATION, 2Tohoku University
P-25 Influence of Sb Content on Interfacial Evolution and Mechanical Reliability of Sn-Sb Solder Joints during Isothermal Aging Beom Jin Kim , Yong-Ho Ko , Junhyuk Son , and Dong-Yurl Yu Advanced Joining & Additive Manufacturing R&D Department, Korea Institute of Industrial Technology (KITECH)
P-26 Interfacial Reactions and Mechanical Properties of Sn-Ag-Cu and Sn-Bi Combined Pb-Free Solder Joints under Multiple Reflow Conditions ○ Jahyeon Kim1 , Dong-Yurl Yu1 , Sojeong Lee1, Junhyuk Son1 , Won Bin Im2 and Yong-Ho Ko1 1Advanced Packaging Integration Center (APIC), Korea Institute of Industrial Technology (KITECH), 2Divison of Materials Science & Engineering, Hanyang University
P-27 Effect of Plating Additives on Copper Filling in Through-Glass Vias: Leveler-Dependent Electrochemical and Microstructural Characteristics ○ Jinyoung Park, Seonghyuk Moon, Heewon Park, Taegyeong Gu, Nayoung Kang and Kiyoung Lee Department of Materials Science and Engineering, Hongik University

October 9, 2026

Session 5

Atomic Layer Process
(Joint Session with the JSAP Atomic Layer Process Research Group)

Chairperson
Hiroto Ohtake, Program Committee Vice Chair
Seiji Muranaka, Program Committee Member
Time Program
10:00–10:30
Invited Talk : 3 from JAPAN-KOREA ALP Workshop
Towards Intelligent and Sustainable ALD Research: On-Demand Precursor Delivery and In-Situ Imaging Ellipsometry for Accelerated Process Development
Takeshi Momose
Kumamoto University
10:30–11:00
Invited Talk : 3 from JAPAN-KOREA ALP Workshop
Atomic Hydrogen for Oxygen-Free Metal ALD and Bottom-Up Interconnect Fill
Han-Bo-Ram Lee
Graduate School of Semiconductor Materials & Devices Engineering, Ulsan National Institute of Science and Technology (UNIST)
11:00–11:20
Oral Session
Defect Modulation and Interface Engineering of Top-Gate SnO₂ Transistors Using Atomic Layer Deposition
○ Jung-Tae Kim, Jiyeong Yang and Woo-Hee Kim
Major in Advanced Materials and Semiconductor Engineering and Department of Material Science and Chemical Engineering, Hanyang University
11:20–11:40
Oral Session
Enhancing the Structural and Electrical Properties of Metal Thin Films via Electron-Beam Post-Treatment
○ Jiwoo Oh, Yongju Kwon, and Woo-Hee Kim
Department of Materials Science and Chemical Engineering, Hanyang University

Session 6

Materials Science and Technology

Chairperson
Kan Takeshita, Program Committee Member
Takafumi Fukushima, Program Committee Member
Time Program
13:00–13:30
Invited Talk : New Materials, Simulation
Metallic delafossites for low-resistivity advanced interconnectsOnline
Takayuki Harada
NIMS
13:30–13:50
Oral Session
Analytical and Computational Study of Early-Stage Reactions in Alkaline Wet Etching of Si and Si1−xGex
○ Tomoki Nara1 , Haru Sendo2, Raimu Endo 1 , Yoshiko Tamaki 1 , Kei Ikeda 1 , and Daisuke Yuhara 1
1Mitsubishi Chemical Corporation, 2Mitsubishi Chemical Taiwan
13:50–14:10
Oral Session
Stealth Laser–Induced Subsurface Gettering Layer Formation for Advanced Chiplet Integration
○ Kazunari Kurita1,3 and Hiroki Kondoh 1,2
1Center of Plasma Nano-interface Engineering, Kyushu University, 2Graduate School of Information Science and Electrical Engineering, Kyushu University,3SUMCO Joint Research Development of 3D-Si Integrated Devices, Kyushu University
14:10–14:30
Oral Session
Epitaxial CoSn thin films on 300-mm-compatible substrates
○ Tomoya Nakatani1, Kritika Sur1, Mevhibe Dilara Pütkül1, Yusuke Ikeda1 , Nattamon Suwannaharn2, Rohit Dahule2, Taisuke Sasaki2, and Ryoji Sahara2
1Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science, 2Research Center for Structural Materials, National Institute for Materials Science
14:30–14:50
Oral Session
Area Selective Deposition by PECVD Using an Added Etchant
○ Kenji Ouchi1, Masato Morishima2, Kazuki Yamada1, Yuji Otsuki3 , Sena Fujita1 , Yasuo Takeuchi1 , Takaaki Tsunomura2 and Kota Umezawa1
1Tokyo Electron Technology Solutions Limited, 2Tokyo Electron Limited, 3Tokyo Electron America, Inc.

Session 7

Advanced Packaging II

Chairperson
Takashi Hirotani, Program Committee Member
Hideki Shimizu, Program Committee Member
Time Program
15:05–15:35
Invited Talk : Hybrid bonding
Development of a test platform to evaluate process variables for copper hybrid bonding technology
Kyungho Park
Korea Advanced Nano Fab Center
15:35–16:05
Invited Talk : 3DI
Challenges for half micron pitch damascene pattern fabrication for organic RDL in next generation’s Chiplet technology
Yoshihiko Hirai
Osaka Metropolitan University
16:05–16:25
Oral Session
Design and Evaluation of a Dual-Functional Polymer for Optical Waveguide Cladding and Hybrid Bonding Dielectric
○ Toshihiko Katayama1, Kazuki Inoue1, Motoya Kaneta1, Yuma Tanaka1 , and Takafumi Fukushima2
1Sumitomo Bakelite Co., Ltd. , 2Tohoku University
16:25–16:45
Oral Session
CVD Stress-Buffer Liner for Reliable Through-Glass Vias in Panel Level Packaging
○ Naoyuki Sato
Applied Materials Inc.
16:45–17:05
Oral Session
Self-Assembly Assisted Hybrid Bonding for 3D Integration: Surface/Interface Characterization and Alignment Accuracy Evaluation
○ Kota Sasaki1 , Bungo Tanaka1, Ryoichi Sato1 , Hayato Hishinuma2, Tetsu Tanaka1,3and Takafumi Fukushima1,3
1Dept. of Mechanical Systems Engineering, Graduate School of Engineering, Tohoku Univ., 2Yamaha Robotics Co., Ltd., 3Dept. of Biomedical Engineering, Graduate School of Biomedical Engineering, Tohoku Univ.
17:05–17:25
Oral Session
Investigation of 1.4 µm-pitch Chip-on-Wafer Hybrid Bonding and the Effects of Bonding Misalignment
○ Sota Mochizuki, Itsuki Imanishi, Toru Osako, Masanori Chiyozono, Kan Shimizu, and Yoshihisa Kagawa
Sony Semiconductor Solutions Corporation

Session 8

Closing

Time Program
17:25–17:30
Closing Remarks
Closing Remarks
Noriaki Matsunaga, Organizing Committee Chair