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 Committee Members

ADMETAPlus 2013: 23rd Asian Committee Members

*** Executive Committee Members ***
J. KOIKE, Tohoku University (Chairperson)
E. KONDO, Yamanashi University (Vice Chairperson)
F. ITO, Tposhiba (Program)
K. MAEKAWA, Renesas Electronics (Tutorial)
A. TSUKUNE, Taiyo Nippon Sanso (General Arrangements)
H. MACHIDA, Gas-Phase Growth (Financial)
N. HATA, AIST (Publicity)

*** Committee Members***
D. L. DIEHL, Applied Materials Japan
Y. HIGUCHI, ULVAC
S. HIZUME, Lam Research
J. INOUE, The University of Tokyo
D. ISHIKAWA, ASM Japan
N. MATSUKI, Canon ANELVA
T. NAKATA, Ebara
O. NAKATSUKA, Nagoya University
T. NEMOTO, Tokyo Electron
S. NOMURA, Hitachi Chemical
T. OWADA, Fujitsu Semiconductor
T. SAITO, Osaka Prefecture University
M. SEKIGUCHI, JSR
H. SHIBATA, Toshiba
T. SHIMAZU, Mitsubishi Heavy Industries
K. SHIMIZU, Sony
N. SHIMIZU, Philtech
M. SUGIYAMA, The University of Tokyo
M. TADA, LEAP
M. B. TAKEYAMA, Kitami Institute of Technology
Y. TSUCHIYA, Renesas Electronics
Y. YAMADA, SanDisk
S. YOKOGAWA, Polytechnic University
L. -J. CHEN, National Tsing Hua University
G. -H. CHOI, Samsung Electronics
Y. -C. JOO, Seoul National University
H. -J. KIM, Yonsei University
T. -K. Ku, ITRI
R. KUMMAR, A*STAR Institute of Microelectronics
C. -C. LIU, UMC
T. NOGAMI, IBM
J. -G. PARK, Hanyang University
Y. -B. PARK, Andong National University
W. -S. SHUE, TSMC

*** Advisory Members***
Y. HORIIKE, NIMS
H. KOMIYAMA, Mitsubishi Research Institute
K. TSUBOUCHI, Tohoku University
M. MURAKAMI, Ritsumeikan
N. KOBAYASHI, ASM Japan
Y. YASUDA, Tohoku University
T. KIKKAWA, Hiroshima University
T. OHBA, Tokyo Institute of Technology
S. ZAIMA, Nagoya University
T. OHTA, The University of Tokyo
K. MASU, Tokyo Institute of Technology
M. TSUJIMURA, Ebara
A. OHSAKI, Renesas Electronics
S. SHINGUBARA, Kansai University
T. YODA, Toshiba
Y. SHIMOGAKI, The University of Tokyo
S. KONDO, Hitachi Chemical
K. UENO, Shibaura Institute of Technology
H. KAWASAKI, Mitsubishi Heavy Industries
Notation based on the Specified Commercial Transaction Act 
 

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