Conference Plenary Speaker:
1) A Glimpse of the Frontier of AI Research
Tamiya Onodera (IBM Research Tokyo)
2) Conductor trends for future interconnects
Zsolt Tokei (imec)
Conference Invited Speaker
1) Advanced Silicide/Germanide technology for sub-16/14 nm node devices
Jun Luo (Chinese Academy of Sciences)
2) Through-cobalt self-forming barrier copper interconnect and alternative
conductor interconnects of cobalt and ruthenium for 7nm BEOL and beyond
Takeshi Nogami (IBM Research)
3) A prospect of metallization technology for future interconnects
Atsunobu Isobayashi (Toshiba)
4) Dielectric Atomic Layer Etching in high volume semiconductor manufacturing:
Why now and how?
Gerardo Delgadino (Lam Research)
5) Selective atomic-level etching using two heating procedures, infrared
irradiation, and ion bombardment, for next-generation semiconductor device
manufacturing
Nobuya Miyoshi (Hitachi)
6) Tungsten CMP as Enabling Process for 14nm Transistor Scaling and Yield Enhancement
Hong Jin Kim (Globalfoundries)
7) Incorporate Graphene into Back End-of-Line for Better Cu Interconnects
Ling Li (Stanford University)
8) Robust nanoscale Cu interconnects coated by atomic-layer materials
Nguyen Thanh Cuong (NIMS)
9) The Critical Role and Application of Metallization Processes in Advanced Packaging
Rozalia Beica (Dow Chemical)
10) Challenges with join & interface integrity in next generation microelectronic
packages
Vivek B. Dutta (EMD Performance Materials)
11) Chalcogenide superlattices for the next generation non-volatile memory
Junji Tominaga (AIST) |
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