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■ ADMETA2007 Program ■
| [October 23, Tuesday] |
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|
| Session 1 |
Opening session |
Chairperson: Y. Shimogaki |
| 9:50-10:00 |
Opening Remarks: S. Shingubara, Chair of Asian Session [Kansai
Univ.] |
|
Award Ceremony |
| 10:00-10:40 (1-1) |
Keynotes: 10 years of BEOL Wiring Innovations - from
Cu through Low-k to Airgaps [IBM] D. Edelstein |
| 10:40-11:20 (1-2) |
Keynotes: Thin Film Metallurgy [Ritsumeikan Univ.]
M. Murakami |
| Session 2 |
Advanced Interconnect Systems |
Chairperson: J. Koike |
| 11:20-11:50 (2-1) |
Invited: Thermal Behavior of Advanced Interconnect
Systems [Tech. Univ. Chemnitz] Thomas Gessner |
| 11:50-12:10 (2-2) |
The Statistical Estimation of the TDDB Lifetimes
of 32 nm Technology Node Multilevel Interconnects
Using the Monte Carlo Simulation [Renesas
Technology Corp.] H. Miyazaki, D. Kodama
and N. Suzumura |
| 12:10-12:30 (2-3) |
Structural Design of Cu Multi-level Interconnects
with Air-Gap by Finite Element Method [Toshiba
Corp.] T. Usui, T. Murofushi, M. Jimbo, H.
Hirayama and H. Shibata |
|
|
| 12:30-13:30 |
Lunch |
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| Session 3 |
CMP |
Chairperson: Y. Shimogaki |
| 13:30-14:00 (3-1) |
Invited: Ru CMP For Bottom Electrode Fromation [Hangyang
Univ.] Jin-Goo Park |
| 14:00-14:20 (3-2) |
Chemical Mechanical Polishing and Wet Cleaning
Technologies of Ruthenium for Porous Low-k/Cu
Interconnects [Selete, *Tosoh Corp., **Cabot
Microelectronics] M. Shiohara, K. Maruyama,
M. Abe, M. Imai, K. Namba, N. Tarumi, Y.
Hara*, K. Matsumura*, V. Brusic**, C. Thompson**,
P. Feeney**, J. Dirksen**, K. Nicholson**,
S. Kondo, S. Ogawa and S. Saito |
| 14:20-14:40 (3-3) |
Electrochemical and Mechanical Characterization
of Surface Reaction Layer between Copper
and CMP Slurry Chemicals [Ebara Corp.] Shohei
Shima, Akira Fukunaga and Manabu Tsujimura |
| 14:40-15:00 (3-4) |
Cu planer plating for CMP CoC reduction [Ebara
Corp.] Keiichi Kurashina, Tsutomu Nakada
and Manabu Tsujimura |
|
|
| 15:00-15:20 |
Coffee Break |
|
|
| Session 4 |
Cu-Metallization (1) |
Chairperson: K. Ueno, N. Shimizu |
| 15:20-15:50 (4-1) |
Invited: Electrofill Challenges and Directions for
Future Device Generations [Novellus] Jon
Reid |
| 15:50-16:10 (4-2) |
Impurities in Electroplated Copper Interconnects
[Fujitsu Lab., *Fujitsu] M. Sunayama, H.
Iwata*, M. Terahara*, M. Nakaishi* and N.
Shimizu |
| 16:10-16:30 (4-3) |
Conformal deposition and gap-filling of copper
into ultra narrow patterns by supercritical
fluid deposition [Univ. of Tokyo] Takeshi
Momose，Masakazu Sugiyama and Yukihiro Shimogaki |
| 16:30-16:50 (4-4) |
Topography sensitive copper deposition for
"post-scalability" era - A novel
nano selective deposition mode [Univ. of
Yamanashi] Eiichi Kondoh, Michiru Hirose,
Eiichi Ukai and Shosaku Aruga |
| 16:50-17:10 (4-5) |
Scaling of the Cu(Al) seed layer thickness
and its impact on the specific resistivity
of sub- 100 nm interconnects [IMEC, *affiliate
for Texas Instruments at IMEC, **Applied
Materials Belgium, ***Applied Materials SCLA]
Laureen Carbonell, Henny Volders, Asad Haider*,
Nancy Heylen, Roger Palmans, Youssef Travaly,
Zsolt T kei, Pieter Boelen**, Aron Rosenfeld***,
Tushar Mandrekar***, Jose Luis Hernandez
and Serge Vanhaelemeersch |
| 17:10-17:30 (4-6) |
Three dimensional (3-D) characterization
of barrier/seed coverage in via using a dedicated
Scanning Transmission Electron Microscope
(STEM) [Selete, *Hitachi High-Technologies
Corp.] Miyuki Takahashi, Noriaki Oda, Shinichi
Ogawa, Mitsuo Ogasawara*, Michiyo Miyakawa*
and Hiroshi Kakibayashi* |
| 17:30-17:50 (4-7) |
CuAl alloy : a robust solution for 45/32nm
integration, [CEA-LETI, *NXP Semiconductors,
**STMicroelectronics] T. Mourier, T. Vanypre*,
J. Torres**, N. Jourdan**, P. Chausse and
M. Cordeau |
| 17:50-18:10 (4-8) |
Guest paper from USA Dan. Edelstein |
|
|
| 18:10-20:00 |
Poster Exhibitor and Banquet |
| <Low-k> |
| (P-1) |
Effect of UV cure on pore interconnectivity
of PECVD SiOC films [ASM Japan K.K.] Kiyohiro
Matsushita, Naoto Tsuji, Ken-ichi Kagami,
Manabu Kato, Shinya Kaneko and Nobuyoshi
Kobayashi |
| (P-2) |
Robust Porous PE-CVD SiOC Film (k<2.4)
with UV Curing for Cu/low-k Multilevel Interconnects
Fabrication [Selete, Inc., *ASM Japan K.K.]
J. Nakahira, K. Tomioka, E. Soda, M. Kato*,
S. Nakao, K. Matsushita*, and K. Kinoshita |
| (P-3) |
Eliminating Device Charging Damage in Electron
Beam Curing (EBKTM) of Low-k SiCOH Films
on 65nm CMOS devices [Applied Materials Inc.,
*Sony Semiconductor Kyushu Corporation, **Sony
Corporation] Amir Al-Bayati, Ashish Shah,
Khaled Elsheref, Takashi Shimizu , Naoyuki
Iwasaki, Tsutomu Kiyohara, Alex Demos, JuanCarlos
Rocha, Hichem M'Saad, Kiyotaka Tabuchi**,
Kensaku Ida*, Koji Kawanami*, Shingo Iemura*,
Yoshifumi Nobe*, Yoshimitsu Ishikawa* and
Tetsuya Yamane* |
| (P-4) |
Evaluating Actual Plasma Damage in Ultra
Low-k Materials for 45 nm nodes [CASMAT]
Hyoh Takahashi, Yoshio Takimoto, Masahiro
Tada and Yoshito Ando |
| (P-5) |
TDDB Characteristics of Low-k Dielectrics
after Plasma Damage Recovery Process [Fujitsu
Lab. Ltd.] T. Imada, Y. Nakata, S. Ozaki,
Y. Kobayashi, K, Yoshikawa and T. Nakamura |
| (P-6) |
A high-reliable Cu/ULK integration scheme
using Metal Hard Mask and Low-k capping film
[IMEC, *Affiliated at IMEC from Matsushita
Electric Industrial Co., Ltd., **ASM Belgium,
***ASM Japan K. K.] Y. Travaly, M. Tsutsue,
A. Ikeda*, P. Verdonck, Zs. T-kei, M. Willegems,
J. Van Aelst, H. Struyf, G. Vereecke, E.
Kesters, Q. T. Le, M. Claes, N. Heylen, F.
Sinapi, O.Richard, D. De Roest**, S. Kaneko***,
N. Kemeling**, A. Fukazawa***, N. Matsuki***,
K. Matsushita***, N. Tsuji***, K. Kagami***,
H. Sprey** and G. Beyer* |
| (P-7) |
Integration of 140 nm Pitch Cu Interconnects
Featuring Template-type PE-CVD SiOC Film
(k<2.4) [Selete Inc., *ASM Japan K. K.]
T. Kubota, J. Nakahira, K. Tomioka, E. Soda,
K. Matsushita*, N. Oda, K. Kinoshita, S.
Kondo, S. Ogawa and S. Saito |
| (P-8) |
Porogen concentration dependence of the pore-size
distribution in low-k porous silica films
with C2H4 groups. [Teikyo Univ. of Science
and Technology, *AIST] Y. Maruyama, T. Ohdairai*,
R. Suzuki* and Y. Uchida |
| (P-9) |
Influence of Moisture Uptake in Porous Par
Film on Electrical Properties [Toshiba Corp.,
*Sony Corp., **NEC Electronics Corp.] N.
Nakamura, N. Matunaga, K. Watanabe, H. Miyajima,
Y. Enomoto*, N. Okada** and H. Shibata |
| (P-10) |
Low dielectric constant borazinic films as
copper diffusion barrier prepared by pseudo-remote
plasma chemical vapor deposition [Mitsubishi
Heavy Industries, Ltd., *Mitsubishi Electric
Corp., **Nippon Shokubai Co., Ltd.] Naoki
Yasuda*, Tadashi Shimazu, Toshihito Fujiwara,
Toshihiko Nishimori, Masahiko Inoue, Hideharu
Nobutoki*, Teruhiko Kumada*, Chiho Mizushima**,
Takuya Kamiyama** and Tetsuya Yamamoto** |
| <Cu-Metallization> |
| (P-11) |
Cu Alloy Seed Layers for Advanced Barrierless
Metallization [National Taiwan Ocean University,
*Chin-Min Institute of Technology] Jinn P.
Chu and C. H. Lin* |
| (P-12) |
Relationship between surface oxidation and
resistivity reduction of a Cu-Mn alloy film
[Tohoku Univ.] Y. Fujii, J. Iijima and J.
Koike |
| (P-13) |
New expanded equation describing the resistivity
of Cu interconnects with a Cu alloy seed
layer and resistivity calculation of 32-nm
node Cu interconnects [Renesas Technology
Corp.] T. Furuhashi, S. Fukui, Y. Nishioka
and A. Osaki |
| (P-14) |
One step fabrication method for Cu thin film
on insulator by Supercritical fluid deposition
[Univ. of Tokyo] Takeshi Uejima, Takeshi
Momose, Masakazu Sugiyama and Yukihiro Shimogaki |
| (P-15) |
The kinetics of Cu2O-CVD process for ULSI
interconnects [Univ. of Tokyo] Yoshio Susa
and Yukihiro Shimogaki |
| (P-16) |
Low-temperature texture improvement of copper
thin films by using hot-filament radical
source [Univ. of Yamanashi] Eiichi KONDOH
and Masaya FUKASAWA |
| <ALD, PVD, Barrier Metals> |
| (P-17) |
Ru nanostructures using highly conformal
Ru ALD and AAO for nanoelectronic applications
[POSTECH] Woo-Hee Kim, Sang-Joon Park, J.
Y. Son and H. Kim |
| (P-18) |
Metal Thin film Prepared by Atomic Layer
Deposition for Contact Application of Nanoscale
Device [POSTECH] Sung Hwan Bang, Han-Bo-Ram
Lee and H. Kim |
| (P-19) |
Highly (002) Preferred Ti Films prepared
by Hydrogen Introduced DC Magnetron Sputter
Techniques [ULVAC, Inc.] Se-Ju Lim*, Min-Soo
Kim, Johji Hiroihi, Yoshiyuki Kadokura and
Michio Ishikawa |
| (P-20) |
Quantitative Studies of Copper Diffusion
through Ultra-thin ALD Tantalum Nitride barrier
films by High resolution-RBS [National Univ.
of Singapore, *Chartered Semiconductor Manufacturing]
C. S. Ho, S.L. Liew*, T.K. Chan, P. Malar,
T. Osipowicz, C.Y.H. Lim and Lu Li |
| (P-21) |
Barrier properties of TiNx thin films formed
by nitridation of sputtered Ti with hot-wire
activated radical species [Kitami Institute
of Technology, *Tohoku Univ.] M. B. Takeyama,
M. Sato, Y. Hayasaka*, E. Aoyagi* and A.
Noya |
| <Cleaning Technologies> |
| (P-22) |
Analysis of Post-CMP Cleaning Mechanisms
for improving TDDB Reliability [Hitachi,
Ltd.,*Sanyo Chemical Industries, Ltd.] Yohei
Yamada, Yasuhito Yagi*, Nobuhiro Konishi,
Naohito Ogiso*, Kiyomi Katsuyama, Shoji Asaka,
Junji Noguchi and Tadakazu Miyazaki |
| (P-23) |
Drying effect on hydrophobic and hydrophilic
surface by IPA [Ebara Corporation] Kouichi
Fukaya, Hiroshi Ota, Shinji Kajita, Yukiko
Nishioka, Fumitoshi Oikawa, Katsuhiko Tokushige
and Manabu Tsujimura |
| <NiSi and Ni-alloys> |
| (P-24) |
Spontaneous Chemical Vapor Growth of NiSi
Nanowires and Their Metallic Properties [Pohang
University of Science and Technology, *Samsung
SDI] Cheol-Joo Kim, Kibum Kang, Yun Sung
Woo, Heesung Moon*, Jae-Myung Kim*, Dong-Sik
Zang* and Moon-Ho Jo* Cheol-Joo Kim, Kibum
Kang, Yun Sung Woo, Heesung Moon*, Jae-Myung
Kim*, Dong-Sik Zang* and Moon-Ho Jo |
| (P-25) |
Contact Properties of Epitaxial NiSi2/Heavily
Doped Si Structures Formed from Ni/Ti/Si
Systems [Nagoya Univ., *Osaka Univ.] S. Akimoto,
O. Nakatsuka, A. Suzuki, A. Sakai*, M. Ogawa
and S. Zaima |
| (P-26) |
Chemical Vapor Deposition of Ni-Pt thin film
using Pt(PF3)4 and Ni(PF3)4 [Meiji Univ.,
*Tri Chemical Lab. Inc., **Toyota Technological
Institute] S. Imai, A. Ogura, M. Ishikawa*,
I. Muramoto*, H. Machida* and Y. Ohshita** |
| <Interconnect Modeling> |
| (P-27) |
Signal transmission through interconnects
with repetitive loads [Tokyo Institute of
Technology] Shuhei Amakawa, Hiroyuki Ito
and Kazuya Masu |
| <Electroplating> |
| (P-28) |
High Aspect-Ratio Pillar Structure with Gold
Electroplating and STP Technique for Thick
Multilevel Interconnections [NTT Corp., *NTT
Advanced Technology Corp.] N. Shimoyama,
K. Ono, N. Sato, T. Sakata, K. Kuwabara,
H. Ishii, T. Kamei*, K. Kudou* and K. Machida* |
| (P-29) |
Self-Catalytic Electroless Plating of Silver
by Displacement Reaction [Kansai Univ., *National
Institute of Information and Communications
Technology] Y.Harada, K.Yamamoto*, S.Tanaka*
and S.Shingubara |
| (P-30) |
Electrical Characteristics of Electrochemical
Plated Cu under Giga Pascal Stresses [Univ.
of Tokyo] Tomohira Tabata, Hirotada Gotou,
Takehiko Yagi and Takayuki Ohba |
|
|
| [October 24, Wednesday] |
| Session 5 |
Packaging Technology and Analysis |
Chairperason: M. Sugiyama |
| 9:20-9:50 (5-1) |
Invited: STP Technology - Interconnects, CMOS MEMS,
Packaging ? [NTT Corporation, *NTT Advanced
Technology Corporation, **Dainippon Screen
Mfg. Co., Ltd.] Norio Sato, Hiromu Ishii,
Katsuyuki Machida*, and Hideki Adachi** |
| 9:50-10:10 (5-2) |
High Frequency Characteristics of On-Chip
Wirings up to 110 GHz [Tokyo Institute of
Technology] Kazuya Miyashita, Hiroyuki Ito,
Kenichi Okada and Kazuya Masu |
| 10:10-10:30 (5-3) |
Wafer-Level-Packaging Inductor with Extremely
High Quality Factor and its Application to
5.8GHz LC-type Voltage Controlled Oscillator
[Fujikura Ltd., *Tokyo Institute of Technology,
**Fujikura Ltd.] Hideki Hatakeyama, Kenichi
Okada*, Kazuma Ohashi*, Yusaku Ito*, Naoyuki
Ozawa, Masakazu Sato, Takuya Aizawa, Tatsuya
Ito, Ryozo Yamauchi**, and Kazuya Masu* |
| 10:30-10:50 (5-4) |
Observation of Stress Induced Voiding (SIV)
in Porous Low-k/Cu interconnects with 70nmf-vias
by Optical-Beam-Induced-Resistance-CHanges
(OBIRCH) Method [NEC Electronics Corp., *Sony
Corp. **Toshiba Corp.] M. Tagami, H. Kunishima,
Y. Goto, Y. Miyamori*, Y. Enomoto*, K. Akiyama**,
N. Matsunaga** and N. Okada |
| 10:50-11:10 (5-5) |
Detection of Interconnect Reliability Failures
by Non-Biased/Biased IR-OBIRCH Method [Kansai
Univ,, *Hamamatsu Photonics Corp.] S. Shingubara,
Y. Harada, S. Nakahara, M. Kawakami, K. Koshikawa*
and T.Nakamura* |
|
|
| 11:10-11:30 |
Coffee Break |
|
|
| Session 6 |
Cu-Metallization (2) |
Chairperson: M. B. Takeyama |
| 11:30-11:50 (6-1) |
Bottom-up Via Filling by Metal Chloride Reduction
Chemical Vapor Deposition [PhyzChemix Corp.]
Yuzuru Ogura, Yutaka Osada, Shinya Matsuo,
Miho Amada and Mai Kamata |
| 11:50-12:10 (6-2) |
A study of the electrical resistivity increase
in narrow and thin copper interconnects [Toshiba
Corp.] M. Wada, M. Yamada, K. Higashi, A.
Kajita and H. Shibata |
| 12:10-12:30 (6-3) |
Resistivity reduction in Cu-Mn alloy self-forming
barrier process. [Tohoku Univ.] J. Iijima,
Y. Fujii, K. Neishi and J. Koike |
|
|
| 12:30-13:30 |
Lunch |
|
|
| Session 7 |
Barrier Metals and Silicides |
Chiarperson: N. Owada |
| 13:30-13:50 (7-1) |
Self-Restored Barrier using Cu-Mn alloy [Fujitsu
Laboratories Ltd., *Fujitsu Limited.] M.
Haneda, T. Tabira, H. Sakai*, H. Kudo, M.
Sunayama, N. Ohtsuka, A. Tsukune and N. Shimizu |
| 13:50-14:10 (7-2) |
Application of ZrB2 thin film as a diffusion
barrier in Cu interconnects [Kitami Institute
of Technology, *ULVAC Materials, Inc., **ULVAC,
Inc.] M. B. Takeyama, Y. Nakadai*, S. Kambara*,
M. Hatanaka** and A. Noya |
| 14:10-14:30 (7-3) |
Barrier metal integration for copper contacts
on nickel silicide [Fujitsu Ltd., *Fujitsu
Lab.] K. Kawamura, S. Akiyama, K. Ohkubo,
N. Idani, T. Shirasu, S. Takesako, A. Asneil,
M. Sato, T. Oshima, H. Sakai, K. Yanai, M.
Nakaishi, N. Shimizu*, H. Watatani and M.
Kase |
| 14:30-14:50 (7-4) |
Atomic layer deposition of Ru/TaNC bi-layer
for ultra-thin CVD Cu seed formation [ASM
Japan] Daekyun Jeong, Souki Ozawa, Hiroaki
Inoue, Akihiko Tashiro, Akira Shimizu and
Hiroshi Shinriki |
| 14:50-15:10 (7-5) |
Dependence of thermal stability of NiSi/Si
on crystal orientation [Fujitsu Ltd., *Fujitsu
Lab.] K. Okubo, K, Kawamura, S. Akiyama,
M. Nakamura*, Y. Kotaka*, T. Itani*, H. Watatani,
K. Yanai, M. Nakaishi and M. Kase |
|
|
| 15:10-15:30 |
Coffee Break |
|
|
| Session 8 |
Low-k |
Chiarperson: Y. Uchida |
| 15:30-16:00 (8-1) |
Invited: Porous SiCOH BEOL dielectrics for 45 and
32 nm CMOS technologies [IBM] Stephen M.Gates |
| 16:00-16:20 (8-2) |
Pore-Connectivity Dependence of Moisture
Absorption into Porous Low-k Films by Positron-Annihilation
Lifetime Spectroscopy [NEC Corp., *AIST]
Fuminori Ito, Tsuneo Takeuchi, Hironori Yamamoto,
Toshiyuki Ohdaira*, Ryoichi Suzuki* and Yoshihiro
Hayashi |
| 16:20-16:40 (8-3) |
Process Induced Damages and Recovery by Silylation
for Low-k/Cu Interconnects with Highly-Porous
Self-Assembled Silica Film [Selete Inc.,
*Mitsui Chemicals, **ULVAC, Inc., ***AIST]
K. Kinoshita, S. Chikaki, E. Soda, K. Tomioka,
H. Tanaka*, K. Kohmura*, T. Nakayama**, T.
Kikkawa*** and S. Saito |
| 16:40-17:00 (8-4) |
PBO/SiC hybrid structure with Ti liner for
reliable barrier-free interconnect [CASMAT,
*Sumitomo Bakelite Co., Ltd] Nobuhide Maeda,
Yoshio Takimoto, Yoshinori Sakamoto, Masahiro
Tada, Michio Nakajima* and Keisuke Funatsu |
| 17:00-17:20 (8-5) |
Mechanical properties of High-temperature
Vapor-Cured Ultra low-K film (Nanoclustering
silica k=2.0) [CATALYSTS & CHEMICALS
INDUSTRIES CO., LTD] Hiroki Arao, Miki Egami
and Akira Nakashima |
| 17:20-17:30 |
Closing Remarks: T. Yoda [Toshiba] |
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