{"id":526,"date":"2025-02-21T15:50:28","date_gmt":"2025-02-21T06:50:28","guid":{"rendered":"https:\/\/www.admeta.org\/wp2025\/?post_type=cpt_admeta&p=526"},"modified":"2025-10-07T13:17:49","modified_gmt":"2025-10-07T04:17:49","slug":"program-2025-ja","status":"publish","type":"cpt_admeta","link":"https:\/\/www.admeta.org\/2025\/cpt_admeta\/program-2025-ja","title":{"rendered":"2025-9-ja-\u8b1b\u6f14\u30d7\u30ed\u30b0\u30e9\u30e0"},"content":{"rendered":"

 <\/p>\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
Conference Program<\/span><\/strong><\/span><\/td>\n<\/tr>\n
<\/td>\n<\/td>\n<\/tr>\n
October 9, 2025 (THU)\u3000Registration Desk Open 9:30<\/span><\/strong><\/span><\/td>\n<\/tr>\n
<\/td>\n<\/td>\n<\/tr>\n
Session 1: Opening Session<\/span><\/strong><\/span><\/td>\n<\/tr>\n
[Opening, Award Ceremony]<\/span><\/strong><\/span><\/td>\n<\/tr>\n
Chairperson: Keisuke Suzuki (Kyushu Institute of Technology)<\/span><\/td>\n<\/tr>\n
\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 Noriaki Matsunaga (Applied Materials Japan, Inc.)\u00a0 \u00a0 <\/span><\/td>\n<\/tr>\n
10:00-10:10<\/span><\/strong><\/td>\nOpening Session:<\/span><\/strong><\/span><\/td>\n<\/tr>\n
Takayasu Saito (Osaka Metropolitan University)<\/span><\/td>\n<\/tr>\n
10:10-10:30<\/span><\/strong><\/td>\nAward Ceremony:<\/span><\/strong><\/td>\n<\/tr>\n
Mayumi B. Takeyama (Kitami Institute of Technology)<\/span><\/td>\n<\/tr>\n
[Plenary Talks]<\/span><\/strong><\/span><\/td>\n<\/tr>\n
Chairperson: Shoko Ono (Mitsui Chemicals Inc.)<\/span><\/td>\n<\/tr>\n
\u00a0\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 Hiroto Ohtake (Applied Materials, Inc.)<\/span><\/td>\n<\/tr>\n
10:30-11:10<\/span><\/strong><\/td>\n1-1 Plenary Talk 1:\u00a0 Introducing a New Transistor Architecture to Enable Scaling beyond Nanosheet Devices<\/span><\/span><\/strong><\/td>\n<\/tr>\n
Huiming Bu<\/span><\/td>\n<\/tr>\n
(IBM Research)<\/span><\/td>\n<\/tr>\n
11:10-11:25<\/span><\/strong><\/td>\nBreak<\/span><\/strong><\/td>\n<\/tr>\n
11:25-12:05<\/span><\/span><\/strong><\/td>\n1-2 Plenary Talk 2:\u00a0 Interconnect Innovations Leading the way for the Leading Edge<\/span><\/span><\/strong><\/td>\n<\/tr>\n
Christopher J. Wilson<\/span><\/td>\n<\/tr>\n
(imec)<\/span><\/td>\n<\/tr>\n
12:05-12:45<\/span><\/strong><\/td>\n1-3 Plenary Talk 3:\u00a0 Metallization Processes for Angstrom Scale Interconnects<\/span><\/strong><\/span><\/td>\n<\/tr>\n
Robert D. Clark<\/span><\/td>\n<\/tr>\n
(Tokyo Electron Limited)<\/span><\/td>\n<\/tr>\n
12:45-14:05<\/span><\/strong><\/td>\nLunch Break<\/span><\/strong><\/td>\n<\/tr>\n
Session 2: LSI Future & New Material<\/span><\/strong><\/span><\/td>\n<\/tr>\n
Chairperson: Seiji Muranaka (Renesas Electronics Corp.)<\/span><\/td>\n<\/tr>\n
\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 Kan Takeshita (Mitsubishi Chemical Corp.) \u00a0 \u00a0<\/span><\/td>\n<\/tr>\n
14:05-14:35<\/span><\/strong><\/td>\n2-1 Invited Talk 1:\u00a0 Paradigm Revolution 2030- Beyond Cliff, Ahead New Paradigm<\/span><\/span><\/strong><\/td>\n<\/tr>\n
Manabu Tsujimura<\/span><\/td>\n<\/tr>\n
(Ebara Corporation)<\/span><\/td>\n<\/tr>\n
14:35-15:05<\/span><\/strong><\/td>\n2-2 Invited Talk 2:\u00a0 Metallic Interfaces of 2D Semiconductor Materials and Devices<\/span><\/strong><\/span><\/td>\n<\/tr>\n
Won-Jong Yoo<\/span><\/td>\n<\/tr>\n
(Sungkyunkwan University)<\/span><\/td>\n<\/tr>\n
15:05-15:25<\/span><\/strong><\/td>\n2-3\u00a0 On The Source\/Drain-Configuration-Dependent Contact Behavior of <\/span>IGZO Vertical Channel-All-Around FETs<\/span><\/span><\/strong><\/td>\n<\/tr>\n
Shujuan Mao 1, Xianglie Sun 1, Wei Yu 1, Fuwang Yang 1, Jiabao Sun 1, Chuanke Chen 2, Weiwei Li 2,<\/span>
\nDi Geng 2, Jing Zhang 1, Guilei Wang 1 and Chao Zhao 1<\/span><\/td>\n<\/tr>\n
(1 Beijing Superstring Academy of Memory Technology,China<\/span>
\n2 Institute of Microelectronics, Chinese Academy of Sciences, China)<\/span><\/td>\n<\/tr>\n
15:25-15:40<\/span><\/strong><\/span><\/td>\nBreak<\/span><\/strong><\/span><\/td>\n<\/tr>\n
Session 3: Process<\/span><\/strong><\/span><\/td>\n<\/tr>\n
Chairperson: Hideki Shimizu (SCREEN Holdings, Co. Ltd.)<\/span><\/td>\n<\/tr>\n
\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 Hidemi Suemori (Hitachi High-Tech Corp.)<\/span><\/td>\n<\/tr>\n
15:40-16:10<\/span><\/strong><\/td>\n3-1 Invited Talk 3:\u00a0 Wet Cleaning Technology for Advanced Semiconductor Device\u00a0<\/span><\/span><\/strong><\/td>\n<\/tr>\n
Masanobu Sato<\/span><\/td>\n<\/tr>\n
(SCREEN Semiconductor Solutions Co., Ltd.)<\/span><\/td>\n<\/tr>\n
16:10-16:40<\/span><\/strong><\/td>\n3-2 Invited Talk 4:\u00a0 Advanced Plasma Etching Technologies for Leading-edge Device Fabrication<\/span><\/span><\/strong><\/td>\n<\/tr>\n
Michikazu Morimoto<\/span><\/td>\n<\/tr>\n
(Hitachi High-Tech Corporation)<\/span><\/td>\n<\/tr>\n
16:40-16:55<\/span><\/strong><\/td>\nBreak<\/span><\/strong><\/td>\n<\/tr>\n
16:55-17:15<\/span><\/strong><\/td>\n3-3\u00a0 Changes in Resistance and Structure of Amorphous-Carbon Film due to Voltage Application between Narrow Gap Electrodes<\/span><\/strong><\/span><\/td>\n<\/tr>\n
\u25cbRikuta Nomura 1, Tatsuhiro Nagasaka 2, Kazuyoshi Ueno 1, and Hiroyasu Ishikawa 1<\/span><\/td>\n<\/tr>\n
(1 Graduate School of Engineering and Science, Shibaura Institute of Technology, Japan<\/span>
\n2 Toray Research Center, Inc., Japan)<\/span><\/td>\n<\/tr>\n
17:15-17:35<\/span><\/strong><\/td>\n3-4\u00a0 Highly Selective Isotropic Atomic Layer Etching of Silicon Using SF\u2086\/H\u2082\/N\u2082 and Ar\/Cl\u2082 Plasma with an Infrared Heating System<\/span><\/span><\/strong><\/td>\n<\/tr>\n
\u25cbHe Wang 1, Kazumasa Okuma 1, Koji Fujisaki 2, Kenichi Kuwahara 1<\/span><\/td>\n<\/tr>\n
(1 Hitachi High-Tech Corporation, Japan<\/span>
\n2 Hitachi Ltd., Japan)<\/span><\/td>\n<\/tr>\n
17:35-17:55<\/span><\/strong><\/td>\n3-5 Copper Recess Impact on Electrical Connectivity of <\/span><\/strong>2.8 \u03bcm-pitch Chip-on-Wafer Hybrid Bonding in CoWoW Integration<\/strong><\/span><\/span><\/td>\n<\/tr>\n
\u25cbItsuki Imanishi, Takahiro Kamei, Akihiro Urata, Toru Osako,<\/span>
\nMasanori Chiyozono, Kan Shimizu, and Yoshihisa Kagawa<\/span><\/td>\n<\/tr>\n
(Sony Semiconductor Solutions Corporation,)<\/span><\/td>\n<\/tr>\n
17:55-18:15<\/span><\/strong><\/td>\n3-6 (Late News)\u00a0 Low-Resistivity TiN Films with Controlled Roughness: ALD Purge Tuning for Advanced 3D memory<\/span><\/span><\/strong><\/td>\n<\/tr>\n
\u25cbWeidu Qin, Jiabao Sun, Yayuan Qin, Baodong Han, Hongbo Sun, Chao Tian, Chao Zhao<\/span><\/td>\n<\/tr>\n
(Beijing Superstring Academy of Memory Technology, China)<\/span><\/td>\n<\/tr>\n
Poster Session<\/span><\/strong><\/span><\/td>\n<\/tr>\n
Chairperson: Takashi Matsumoto (Tokyo Electron Technology Solutions Ltd.)<\/span><\/td>\n<\/tr>\n
\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 Hiroto Ohtake (Applied Materials, Inc.)<\/span><\/td>\n<\/tr>\n
18:30-20:00<\/span><\/strong><\/td>\nP-1 (withdrawn)<\/span> Process Optimization Strategy for Advanced MTJ stacks with High Tunneling Magnetoresistance and Robust Perpendicular Magnetic Anisotropy on 300-mm wafer<\/strong><\/span><\/span><\/td>\n<\/tr>\n
Haochang Lyu1, Shucheng Dong1, Bowen Dong1*, Guilei Wang1, Chao Zhao1<\/span><\/td>\n<\/tr>\n
(1 Beijing Superstring Academy of Memory Technology, China)<\/span><\/td>\n<\/tr>\n
P-2\u00a0<\/span> Correlation Between Film Stress, Interfacial Adhesion Energy, and Dielectric Reliability in ALD Ru\/ZnO Thin Films under Various Annealing Conditions<\/span><\/strong><\/span><\/td>\n<\/tr>\n
\u25cbDaeyoon Jeong1, Suyeon Lee1, Yeseul Son2, Yuki Mori2,3, Gyunghyun Kim5, Juhyun Lee5, Changwoo Byun5, Soo-Hyun Kim2,4, Young-Bae Park1\u2020<\/span><\/td>\n<\/tr>\n
(1School of Materials Science and Engineering, Gyeongkuk National University, Republic of Korea<\/span>
\n2Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Republic of Korea<\/span>
\n3Chemical Materials Development Department, TANAKA Precious Metals, Tsukuba, Japan<\/span>
\n4Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Republic of Korea<\/span>
\n5Semiconductor Innovation Center, Advanced Institute of Convergence Technology, Republic of Korea)<\/span><\/td>\n<\/tr>\n
P-3<\/span><\/strong>\u00a0 Optimization of High-Orientation h-BN Film Growth via N2 Plasma in PE-CVD<\/strong><\/span><\/span><\/td>\n<\/tr>\n
\u25cbYukihiro Muta1, Masahito Sugiura1, Takashi Matsumoto1<\/span><\/td>\n<\/tr>\n
(1 Tokyo Electron Technology Solutions ltd.1, Japan)<\/span><\/td>\n<\/tr>\n
P-4<\/span><\/strong>\u00a0 Reproducible edge contact via dual etching process for BSP-compatible 2d<\/span><\/strong><\/span><\/td>\n<\/tr>\n
\u25cbHyokwang Park,1 Kenji Watanabe,2 Takashi Taniguchi,2 and Won Jong Yoo1<\/span><\/td>\n<\/tr>\n
(1 SKKU Advanced Institute of Nano-Technology (SAINT) and Department of Nano Science and Technology, Sungkyunkwan University, Korea<\/span>
\n2 National Institute for Materials Science, Japan)<\/span><\/td>\n<\/tr>\n
P-5\u00a0 Consideration of the effect of the complexation action of leveling agent on the filling morphology in blind vias during electrolytic copper plating<\/strong><\/span><\/span><\/td>\n<\/tr>\n
\u25cbNaoki Okamoto1 Ikuho Maekawa1, Takeyasu Saito1 Yoshinobu Yasuda2, Seiji Kamemura3<\/span><\/td>\n<\/tr>\n
(1 Dept. of Chemical Engineering, Osaka Metropolitan University, Japan, 2 Northeastern Industrial Research Center of Shiga Prefecture, Japan, 3 PWB Co., Ltd, Japan)<\/span><\/td>\n<\/tr>\n
P-6<\/span>\u00a0 Area-selective Cu-deposition behavior using CuI-precursor on Ta fine structures<\/span><\/strong><\/span><\/td>\n<\/tr>\n
\u25cbYu Miyamoto1 and Satoshi Yamauchi1<\/span><\/td>\n<\/tr>\n
(1Quantum Beam Science & Technology, Graduate School of Ibaraki University, Japan)<\/span><\/td>\n<\/tr>\n
P-7\u00a0<\/span> Observation of Intralayer Dzyaloshinskii\u2013Moriya Interaction in CoFeB Ferromagnetic Thin Films via Ion Implantation<\/span><\/strong><\/span><\/td>\n<\/tr>\n
\u25cbShuo Xu 1,2,3, Peiyue Yu1,2, Yanru Li 1,2, Meiyin Yang 1,2, and Jun Luo 1,2<\/span><\/td>\n<\/tr>\n
(1 Key Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences, China<\/span>
\n2 Institute of Microelectronics, Chinese Academy of Sciences, China<\/span>
\n3 School of Integrated Circuits, University of Chinese Academy of Sciences, China)<\/span><\/td>\n<\/tr>\n
P-8<\/span><\/strong>\u00a0Graphene Formation at Low Temperature <\/span><\/strong><\/span>with High-Power Pulsed Sputtering and Plasma-enhanced CVD<\/span><\/strong><\/td>\n<\/tr>\n
\u25cbAkihiro Iwata 1, Masanori Shinohara 1, and Takashi Matsumoto 2<\/span><\/td>\n<\/tr>\n
(1 Dept. of Electrical Engineer., Fukuoka Univ., Fukuoka, Japan<\/span>
\n2 Tokyo Electron Technology Solutions Limited, Nirasaki, Japan)<\/span><\/td>\n<\/tr>\n
P-9<\/span>\u00a0 Application of Superconductive Assisted Machining (SUAM) <\/span><\/strong><\/span>to Cu CMP for Backend Interconnects<\/span><\/strong><\/td>\n<\/tr>\n
\u25cbSoma Yamamoto 1, Ryuya Yoshizu 1, Takuma Shimizu 2, Otabe Edmond Soji 2 and Keisuke Suzuki 1<\/span><\/td>\n<\/tr>\n
(1 Dept. of Computer Science and Systems Engineering, Kyushu Institute of Technology, Japan<\/span>
\n2 Dept. of Physics and Information Technology, Kyushu Institute of Technology, Japan)<\/span><\/td>\n<\/tr>\n
P-10<\/span>\u00a0 Study on the Removal Method of nanoparticles <\/span><\/strong><\/span>using Cleaning-Assisted resin Particles<\/span><\/strong><\/td>\n<\/tr>\n
\u25cb Keisuke Suzuki and Yuki Suematsu and Natsuko Urushihara and Hamada Satomi and Yutaka Wada and Hirokuni Hiyama<\/span><\/td>\n<\/tr>\n
(Kyushu Institute of Technology, Graduate School of Information Engineering, Department of Information Engineering, Advanced Machine Course , Japan<\/span>
\nEbara Corporation, Precision Processing and Interface Control Research Group, Fundamental Technology Research Department, Technology & Intellectual Property Division, Japan<\/span><\/td>\n<\/tr>\n
P-11 (Late News)<\/span><\/strong>\u00a0 Low-temperature reduction of tungsten surfaces by vacuum ultraviolet light irradiation under reducing gases<\/span><\/strong><\/span><\/td>\n<\/tr>\n
\u25cb Shinichi. Endo1, Akihiro Shimizu2, Fumitoshi Takemoto2<\/span><\/td>\n<\/tr>\n
(1 Ushio Inc., Japan, 2 Ushio Inc., Japan)<\/span><\/td>\n<\/tr>\n
P-12 (Late News)<\/strong><\/span>\u00a0 Modification of Copper Oxide by Vacuum Ultraviolet Light Irradiation under Different Reducing Atmosphere<\/strong><\/span><\/span><\/td>\n<\/tr>\n
\u25cbKaito Katayama1, Takeyasu Saito1, Naoki Okamoto1, Shinichi Endo 2<\/span><\/td>\n<\/tr>\n
(1 Osaka Metropolitan Univ., Japan, 2 Ushio Inc., Japan)<\/span><\/td>\n<\/tr>\n
P-13 (Late News)<\/strong><\/span>\u00a0 Enhancement of CMP Removal Rate of SiC by Ion Implantation<\/span><\/strong><\/span><\/td>\n<\/tr>\n
\u25cbYuya Uchida 1, Sota Ueda 2, Taido Kurauchi 1, Takeshi Matsumoto 1 and Keisuke Suzuki 2<\/span><\/td>\n<\/tr>\n
(1 Nissin Ion Equipment Co., Japan, 2 Kyushu Institute of Technology, Japan)<\/span><\/td>\n<\/tr>\n
P-14 (Late News)<\/span> Low-temperature Deposited SiOx Film Applicable to Various 3D-LSI<\/span><\/strong><\/span><\/td>\n<\/tr>\n
\u25cbMayumi B. Takeyama and Masaru Sato<\/span><\/td>\n<\/tr>\n
(Kitami Institute of Technology, Japan)<\/span><\/td>\n<\/tr>\n
October 10, 2025 (THU)\u3000Registration Desk Open 9:30<\/span><\/span><\/strong><\/span><\/p>\n

Session 4: ALD<\/span><\/strong><\/span><\/td>\n<\/tr>\n

Chairperson: Maryam Hosseini (imec)<\/span><\/td>\n<\/tr>\n
\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 Takashi Matsumoto (Tokyo Electron Technology Solutions Ltd.)<\/span><\/td>\n<\/tr>\n
9:40-10:10<\/span><\/strong><\/td>\n4-1 Invited Talk 5:\u00a0 Area-Selective Atomic Layer Deposition through Locally Activated and Deactivated Approaches for Bottom-Up Nanopatterning<\/span><\/strong><\/span><\/td>\n<\/tr>\n
Woo-Hee Kim<\/span><\/td>\n<\/tr>\n
(Hanyang University)<\/span><\/td>\n<\/tr>\n
10:10-10:40<\/span><\/strong><\/td>\n4-2 Invited Talk 6:\u00a0 Scaling in the Future: Atomic Layer Deposition of Metals for Next Generation of Device<\/span><\/span><\/strong><\/td>\n<\/tr>\n
Chiyu Zhu<\/span><\/td>\n<\/tr>\n
(ASM)<\/span><\/td>\n<\/tr>\n
10:40-10:55<\/span><\/strong><\/td>\nBreak<\/span><\/strong><\/span><\/td>\n<\/tr>\n
10:55-11:15<\/span><\/strong><\/td>\n4-3\u00a0 Probing Pd-Enhanced Nucleation for Process Development of Ultrathin Continuous ALD-Co Films<\/span><\/span><\/strong><\/td>\n<\/tr>\n
\u25cbYubin Deng, Jun Yamaguchi, Yuhei Otaka, Souga Nagai, Noboru Sato, Naoki Tamaoki, Atsuhiro Tsukune, and Yukihiro Shimogaki<\/span><\/td>\n<\/tr>\n
(Dept. of Materials Engineering, The Univ. of Tokyo, Japan)<\/span><\/td>\n<\/tr>\n
11:15-11:35<\/span><\/strong><\/td>\n4-4\u00a0 Topographically Selective Atomic Layer Deposition of HfO2<\/sub> Thin Films in High Aspect Ratio Structures by Vapor-Dosed Surface Protector<\/span><\/span><\/strong><\/td>\n<\/tr>\n
\u25cbJiwoo Oh1, 2, and Woo-Hee Kim1, 2, *<\/span><\/td>\n<\/tr>\n
(1 Major in Advanced Materials and Semiconductor Engineering and 2 Department of Material Science and Chemical Engineering, Hanyang University, Republic of Korea)<\/span><\/td>\n<\/tr>\n
\u00a0 \u00a0 \u00a0 \u00a0 \u00a0<\/strong><\/span><\/td>\n<\/tr>\n
Session 5: Interconnect<\/span><\/strong><\/span><\/span><\/td>\n<\/tr>\n
Chairperson: Masaya Kawano (The University of Tokyo)<\/span><\/td>\n<\/tr>\n
\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 Naoko Kato (IBM Research \u2013 Tokyo)<\/span><\/td>\n<\/tr>\n
11:35-12:05<\/span><\/strong><\/td>\n5-1 Invited Talk 7:\u00a0 A novel BEOL Ru interconnect beyond Cu era<\/span><\/span><\/strong><\/td>\n<\/tr>\n
Seongho Park<\/span><\/td>\n<\/tr>\n
(imec)<\/span><\/td>\n<\/tr>\n
12:05-13:25\u00a0 \u00a0 \u00a0<\/strong><\/span><\/td>\nLunch<\/span><\/strong><\/span><\/td>\n<\/tr>\n
13:25-13:55\u00a0 \u00a0\u00a0<\/strong><\/span><\/td>\n5-2 Invited Talk 8:\u00a0\u00a0Degradation Mechanisms and Reliability Enhancement of Copper Interconnects<\/strong><\/span><\/td>\n<\/tr>\n
<\/td>\nKazuyoshi Ueno and Fumihiro Inoue<\/span><\/td>\n<\/tr>\n
<\/td>\n(Yokohama National University)<\/span><\/td>\n<\/tr>\n
13:55-14:15<\/span><\/strong><\/td>\n5-3<\/span> Stress-controlled, Low-Resistivity Ruthenium Thin Films for Sub-2 nm Node Interconnects<\/span><\/strong><\/span><\/td>\n<\/tr>\n
\u25cbYusuke Mizobata, Ryosuke Hayashi, Kensei Kugio, Rozu Hemmi, Sho Hamano, Kaito Tabata,<\/span>
\nTakahisa Tanaka, and Munehiro Tada<\/span><\/td>\n<\/tr>\n
(Keio University, Japan)<\/span><\/td>\n<\/tr>\n
14:15-14:35<\/span><\/strong><\/td>\n5-4\u00a0 Demonstration of Anisotropic Resistivity in CoSn Kagome Metal Thin Films<\/span><\/strong><\/td>\n<\/tr>\n
\u25cbTomoya Nakatani1, Nattamon Suwannaharn2, Rohit Dahule2, Taisuke Sasaki2, and Ryoji Sahara2<\/span><\/td>\n<\/tr>\n
(1 Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science, Japan<\/span>
\n2 Research Center for Structural Materials, National Institute for Materials Science, Japan)<\/span><\/td>\n<\/tr>\n
14:35-14:50<\/span><\/strong><\/td>\nBreak<\/span><\/strong><\/td>\n<\/tr>\n
Session 6: Packaging<\/span><\/strong><\/span><\/td>\n<\/tr>\n
Chairperson: Noriaki Matsunaga (Applied Materials Japan, Inc.)<\/span><\/td>\n<\/tr>\n
\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 Eiichiro Sudo (Tokyo Electron Ltd.)<\/span><\/td>\n<\/tr>\n
14:50-15:20<\/span><\/strong><\/td>\n6-1 Invited Talk 9:\u00a0 Wafer bonding W2W Bonding Process Challenges for High Volume Manufacturing<\/span><\/strong><\/td>\n<\/tr>\n
Yoshihiro Kondo<\/span><\/td>\n<\/tr>\n
(Tokyo Electron Kyushu Limited)<\/span><\/td>\n<\/tr>\n
15:20-15:50<\/span><\/strong><\/td>\n6-2 Invited Talk 10: Enabling High Density Packaging with Digital Lithography
\n<\/span><\/span><\/strong><\/td>\n<\/tr>\n
Niranjan Khasgiwale<\/span><\/td>\n<\/tr>\n
(Applied Materials Inc.) “\u672c\u8b1b\u6f14\u306eQ&A\u306fonsite\u306e\u307f\u3067\u884c\u3044\u307e\u3059”<\/span><\/td>\n<\/tr>\n
15:50-16:05<\/span><\/strong><\/td>\nBreak<\/span><\/strong><\/td>\n<\/tr>\n
16:05-16:25<\/span><\/strong><\/td>\n6-3<\/span><\/strong>\u00a0 Integration of 2 \u00d7 4 \u03bcm pitch capsule-shaped TSVs and 2 \u03bcm pitch TSVs for three-layer stacked device<\/strong><\/span><\/span><\/td>\n<\/tr>\n
\u25cbSeiichiro Masuki, Masaki Haneda, Takuhiro Miyawaki, Yukari Fukumizu, Kosei Kubota,<\/span>
\nKan Shimizu, and Yoshihisa Kagawa<\/span><\/td>\n<\/tr>\n
(Sony Semiconductor Solutions Corporation, Kanagawa, Japan)<\/span><\/td>\n<\/tr>\n
16:25-16:45<\/span><\/strong><\/span><\/td>\n6-4\u00a0 TSV-Driven Mini-LEDs: Demonstration and Characterization of Heterogeneous 3D-IC Based on a Die-Level Process<\/span><\/span><\/strong><\/td>\n<\/tr>\n
\u25cbJiayi Shen 1, Akihiro Tominaga 1, Bungo Tominaga 1, Chang Liu 1, Tetsu Tanaka1,2 and<\/span>
\nTakafumi Fukushima1,2<\/span><\/td>\n<\/tr>\n
(1 Dept. of Mechanical Systems Engineering, Graduate School of Engineering, Tohoku Univ., Japan<\/span>
\n2 Dept. of Biomedical Engineering, Graduate School of Biomedical Engineering, Tohoku Univ., Japan)<\/span><\/td>\n<\/tr>\n
16:45-17:05<\/span><\/strong><\/td>\n6-5<\/span> Thermally Stable, Low-Temperature Si\u2013Si Bonding with Suppressed Void Formation for \u03bcLHP-Integrated 3D Ics<\/span><\/strong><\/span><\/td>\n<\/tr>\n
\u25cb Dianping Jiang1, Masaaki Hashimoto1, Hosei Nagano2, and Munehiro Tada1<\/span><\/td>\n<\/tr>\n
(1 Keio University, Japan<\/span>
\n2 Nagoya University, Japan)<\/span><\/td>\n<\/tr>\n
Closing remark<\/span><\/strong><\/span><\/p>\n

Chairperson: Takayasu Saito (Osaka Metropolitan University)<\/span><\/td>\n<\/tr>\n

17:05-17:10<\/span><\/strong><\/span><\/td>\nClosing<\/span><\/strong><\/span><\/td>\n<\/tr>\n
<\/td>\n<\/td>\n<\/tr>\n
All sessions will be conducted in English.<\/span><\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n","protected":false},"featured_media":0,"template":"","txo_year":[80],"class_list":["post-526","cpt_admeta","type-cpt_admeta","status-publish","hentry","txo_year-80"],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/www.admeta.org\/2025\/wp-json\/wp\/v2\/cpt_admeta\/526","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.admeta.org\/2025\/wp-json\/wp\/v2\/cpt_admeta"}],"about":[{"href":"https:\/\/www.admeta.org\/2025\/wp-json\/wp\/v2\/types\/cpt_admeta"}],"wp:attachment":[{"href":"https:\/\/www.admeta.org\/2025\/wp-json\/wp\/v2\/media?parent=526"}],"wp:term":[{"taxonomy":"txo_year","embeddable":true,"href":"https:\/\/www.admeta.org\/2025\/wp-json\/wp\/v2\/txo_year?post=526"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}