{"id":423,"date":"2024-02-08T11:33:20","date_gmt":"2024-02-08T02:33:20","guid":{"rendered":"https:\/\/www.admeta.org\/wp2024\/?post_type=cpt_admeta&p=423"},"modified":"2024-10-07T15:15:57","modified_gmt":"2024-10-07T06:15:57","slug":"program-2024-ja","status":"publish","type":"cpt_admeta","link":"https:\/\/www.admeta.org\/2024\/cpt_admeta\/program-2024-ja","title":{"rendered":"2024-9-ja-\u8b1b\u6f14\u30d7\u30ed\u30b0\u30e9\u30e0"},"content":{"rendered":"

Day-1\u3000October 3, 2024 (THU)<\/span><\/strong><\/span><\/p>\n

Session 1: Opening Session<\/span><\/strong><\/span>
\n10:00\u00a0 \u00a0 Opening Talk 1-1<\/span><\/strong><\/span>
\n10:10\u00a0 \u00a0 Award Ceremony: 1-2\u00a0<\/span><\/strong><\/span><\/p>\n

Session 2: Plenary Session -1<\/span><\/strong><\/span>
\n10:30 -11:10\u00a0 \u00a0 2-1 (Plenary Talk 1)<\/strong>\u00a0 \u00a0An Ecosystem of Innovative Wet Process Solutions for Creating Customer Value<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 Takumi Mikawa <\/span>(SCREEN Semiconductor Solutions Co., Ltd.)<\/span><\/span><\/p>\n

11:10 – 11:25\u00a0 \u00a0Break<\/span><\/strong><\/span><\/p>\n

Session 3: Metallization-1<\/span><\/strong><\/span><\/p>\n

11:25 – 11:55\u00a0 \u00a03-1 (Invited Talk) <\/strong>Tungsten and Copper Interconnect Resistance Reduction Enabling Energy Efficient
\n<\/span><\/span>\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 and High-Performance Applications for 2 nm Node and Beyond<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 <\/span>Gaurav Thareja\u00a0<\/span><\/span>(Applied Materials)<\/span><\/span><\/p>\n

11:55 – 12:15\u00a0 \u00a03-2<\/strong>\u00a0 \u00a0Uniform TiN capped Co-Based Buried Bit Line of the DRAM with 4F2<\/sub> Cell Architecture<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0Jiabao Sun, Tielu Liu, Chao Tian, Jun Zhou, Hongbo Sun, Baodong Han, and * Chao Zhao<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 (<\/span><\/span>Beijing Superstring Academy of Memory Technology)<\/span>
\n12:15 – 12:35\u00a0 \u00a03-3<\/strong>\u00a0 \u00a0Enhanced thermal stability and reduced specific contact resistivity in P-type SiGe ohmic contact
\n<\/span>\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0through ultra-thin Mo interlayer<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0Xu Chen 1,2,3<\/sup>, Jing Xu 1,2<\/sup>, Shujuan Mao 4<\/sup>, Chang Liu 1,2,3<\/sup> and Jun Luo 1,2<\/sup><\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 (<\/span><\/span>1 Key Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences,\u00a0<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a02 Institute of Microelectronics, Chinese Academy of Sciences,
\n<\/span>\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a03 School of Integrated Circuits, University of Chinese Academy of Sciences,<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a04 Beijing Superstring Academy of Memory Technology)<\/span><\/p>\n

12:35 – 14:05\u00a0 \u00a0Lunch Break<\/span><\/strong><\/span><\/p>\n

Session 4: Plenary Session-2<\/span><\/strong><\/span>
\n14:05 – 14:45\u00a0 \u00a04-1 (Plenary Talk 2) <\/strong>Latest Technology Trends in the Semiconductor Industry
\n<\/span>\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 Akihisa Sekiguchi <\/span>(TEL)<\/span><\/span><\/p>\n

14:45 – 15:25\u00a0 \u00a04-2 (Plenary Talk 3) <\/strong>The Era of Heterogeneous Integration
\n<\/span>\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 Woong Sun Lee <\/span>(SK hynix)<\/span><\/span><\/p>\n

15:25 – 15:40\u00a0 \u00a0Break<\/span><\/strong><\/span><\/p>\n

Session 5: Metallization-2<\/span><\/strong><\/span>
\n15:40 – 16:10\u00a0 \u00a05-1 (Invited Talk)\u00a0<\/strong> \u00a0 Material screening for future diffusion barriers: modelling of binary and\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0ternary metal alloys and detailed experimental analysis of their barrier performance
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 <\/span>Bettina Wehring, Firat Karakus, Lukas Gerlich, Benjamin Lilienthal-Uhlig<\/span>\u00a0<\/span>(Fraunhofer IPMS)<\/span><\/span>
\n16:10 – 16:30\u00a0 \u00a05-2<\/strong>\u00a0 \u00a0Point Defects in NiAl Interconnects Probed by Positron Annihilation Spectroscopy and Atom Probe Tomography<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0\u25cbA. Uedono 1<\/sup>, C. Fleischmann 2,3<\/sup>, J.-P. Soulie 2<\/sup>, M. Ayyad 2<\/sup>, J. E. Scheerder 2<\/sup>, C. Adelmann 2<\/sup>, J. Uzuhashi 4<\/sup>,
\nT. Ohkubo 4<\/sup>, K. Michishio 5<\/sup>, N. Oshima 5<\/sup>, and S. Ishibashi 6<\/sup><\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 (1 Faculty of Pure and Applied Science, University of Tsukuba, <\/span>2 Imec,
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 <\/span><\/span>3 Quantum Solid-State Physics Group, <\/span>4 National Institute for Materials Science,
\n<\/span>\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 5 Research Institute for Measurement and Analytical Instrumentation, AIST,
\n<\/span>\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 6 Research Center for Computational Design of Advanced Functional Materials, AIST)<\/span><\/span>
\n16:30 – 16:50\u00a0 \u00a05-3<\/strong>\u00a0 \u00a0Evaluation of Reactive Sputtered Ti- and V- MAX Alloy Thin Films for Wiring Material by H2<\/sub> Addition<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0Takeyasu SAITO, Kazuki UEDA, Naoki OKAMOTO<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 (<\/span>Department of Chemical Engineering, Graduate School of Engineering, Osaka Metropolitan University)<\/span><\/p>\n

16:50 – 17:05\u00a0 \u00a0Break<\/span><\/strong><\/span><\/p>\n

Session 6: CMP Technology<\/span><\/strong><\/span><\/p>\n

17:05 – 17:35\u00a0 \u00a06-1\u00a0(Invited Talk)\u00a0<\/strong> \u00a0CMP Surrly Technology for Advanced Packaging<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0Anne Miller\u00a0(<\/span>FUJIMI INCORPORATED)<\/span><\/span>
\n17:35 – 18:05\u00a0 \u00a06-2 (Invited Talk) <\/strong>Recent Development of CMP Process for Advanced Metal Interconnects<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0Hong Jin Kim\u00a0(<\/span>Samsung)<\/span><\/span>
\n18:05 – 18:25\u00a0 \u00a06-3<\/strong>\u00a0 \u00a0Post CMP Cleaning for New Interconnect Material NiAl<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0\u25cbTomohiro Kusano 1<\/sup>, Tatsushi Baba 1<\/sup>, Kan Takeshita 1<\/sup> and Nancy Heylen 2<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 (1 Mitsubishi Chemical Corporation, <\/span>2 imec vzw)<\/span><\/span><\/p>\n

18:30 – 20:00\u00a0 \u00a0Poster Session<\/span><\/strong><\/span>
\nP-01<\/strong>\u00a0 (with drawn)\u00a0<\/span><\/strong>A study of the effect of wet cleaning processes on TIN liner cut off with different techniques<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u25cbChaoyang Guan, Jiao Jin, Chao Tian, Wenjun Chen, Mengyuan Zhu, Jian Liu, Baodong Han, Weidu Qin, Hongbo Sun,
\nGuilei Wang, and Chao Zhao<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 (Beijing Superstring Academy of Memory Technology)<\/span>
\nP-02<\/strong>\u00a0 \u00a0Etching characterization of Si materials in surfactant tetramethylammonium hydroxide solution<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u25cbLianlian Li 1,2,3<\/sup>, Guanqiao Sang 1,2,3<\/sup>, Peng Wang 1,2,3<\/sup>, Renjie Jiang 1,2,3<\/sup>, Lei Cao 1,2,3<\/sup>, Qingkun Li 1,2,3<\/sup>,
\nMeihe Zhang 1,2,3<\/sup>, Zhongrui Wang 1,2,3<\/sup>, Hang Zhang 1,2,3<\/sup>, Anyan Du 1,2,3<\/sup>, Qingzhu Zhang 1,2,3<\/sup>, HuaXiang Yin 1,2,3<\/sup><\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 (1 Key Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences,<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a02 Institute of Microelectronics, Chinese Academy of Sciences,<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a03 School of Integrated Circuits, University of Chinese Academy of Sciences)<\/span><\/p>\n

P-03<\/strong>\u00a0 \u00a0Design and prediction of CMP process for organic dielectric and Cu layer by deep learning<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 T. Tanaka 1<\/sup>, R. Tanaka 1<\/sup>, K. Okada 1<\/sup>, H. Nishizawa 2,6<\/sup>, K. Tsukamoto 2,6<\/sup>, T. Doi 2,6<\/sup>6, M. Ozono 3,6<\/sup>, <\/span>H. Kimuro 3,6<\/sup>,
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 <\/span>H. Hirai 3,6<\/sup>, S. Yamamoto 4<\/sup>, S. Takahashi 5,6<\/sup>, Y. Minami 5,6<\/sup>, M. Yasuda 1,6<\/sup>, M. Sasago 1,6<\/sup>, <\/span>T. Saito 1,6<\/sup>, and Y. Hirai 1,6<\/sup><\/span><\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 1 Osaka Metropolitan Univ., <\/span>2 Doi Laboratory Inc., 3 AIST Kyushu, 4 Kyushu Institute of Technology,
\n<\/span>\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 5 Litho Tech Japan, 6 RCS consortium)<\/span><\/span>
\nP-04<\/strong>\u00a0 \u00a0Consideration of the effect of suppressing additives in copper wiring formation using EIS measurement<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u25cbNaoki Okamoto1 Ikuho Maekawa 1<\/sup>, Takeyasu Saito1<\/sup> Yoshinobu Yasuda2<\/sup>, Seiji Kamemura3<\/sup><\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 (1 Dept. of Chemical Engineering, Osaka Metropolitan University,
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0<\/span><\/span>2 Northeastern Industrial Research Center of Shiga Prefecture, 3 PWB Co., Ltd.)<\/span>
\nP-05<\/strong>\u00a0 \u00a0High Intercalation Doping of MoCl5<\/sub> to Multilayer Graphene Deposited by CVD<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u25cbTaisei Higashino and Kazuyoshi Ueno<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 (Graduate School of Engineering and Science, Shibaura Institute of Technology)<\/span>
\nP-06\u00a0<\/strong> \u00a0Effects of Annealing Conditions on the Interfacial Adhesion Energies of ALD Ru\/ZnO Thin Films<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u25cbDaeyoon Jeong 1<\/sup>, Gahui Kim 1<\/sup>, Minjin Kim 1<\/sup>, Yeseul Son 2<\/sup>, Yuki Mori 2,3<\/sup> Gyunghyun Kim 5<\/sup>, Juhyun Lee 5<\/sup>,
\nChangwoo Byun 5<\/sup>, Soo-Hyun Kim 2,4<\/sup>, Young-Bae Park1<\/sup><\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 (1 School of Materials Science and Engineering, Andong National University,<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 2 Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology,\u00a0<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 3 Chemical Materials Development Department, TANAKA Precious Metals<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 4 Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology,\u00a0<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 5 Semiconductor Innovation Center, Advanced Institute of Convergence Technology)<\/span>
\nP-07<\/strong>\u00a0 \u00a0Study of chemical vapor deposition of Cu using CuI on Ta<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u25cbYu Miyamoto, Satoshi Yamauchi<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 (Quantum Beam Science & Technology, Graduate School of Ibaraki University)<\/span>
\nP-08<\/strong>\u00a0 \u00a0Hydrazine Delivery Technologies for Low-Temperature ALD TiN in BEOL Process<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u25cb Hayato Murata, Yoshifumi Wada, Hideharu Shimizu<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 (Taiyo Nippon Sanso Corporation)<\/span>
\nP-09<\/strong>\u00a0 \u00a0Machine Learning Molecular Dynamics Study of Thermal Boundary Resistance between Barrierless Interconnect Metals
\nand SiO2<\/sub> Interlayer Dielectric<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u25cbShuichiro Hashimoto1, Yusuke Nishimura2 and Takanobu Watanabe1,2<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 (1 Sustainable Energy & Environmental Society Open Innovation Research Organization, Waseda University,<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a02 Faculty of Science and Engineering, Waseda University)<\/span>
\nP-10<\/strong>\u00a0 \u00a0Temperature-Dependent Hysteresis of InSnO and InGaZnO Thin Film Transistors<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 Jie Luo 1,2,3,4<\/sup>, Jiabao Sun 4<\/sup>, Yupeng Lu 1,2,3<\/sup>, Yanyu Yang 1,2,3<\/sup>, Guilei Wang 4<\/sup>, Gaobo Xu 1,2,3<\/sup>, Huaxiang Yin 1,2,3<\/sup>,
\nChao Zhao 4<\/sup>, Jun Luo 1,2,3<\/sup><\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 (1 Key Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences,<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 2 Institute of Microelectronics, Chinese Academy of Sciences,<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 3 School of Integrated Circuits, University of Chinese Academy of Sciences,<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 4 Beijing Superstring Academy of Memory Technology)<\/span>
\nP-11<\/strong>\u00a0 \u00a0Impact of asymmetric Source-to-Gate and Drain-to-Gate Overlap Lengths on the Performance of Back Gate IGZO TFTs<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 Yunjiao Bao<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 (Chinese Academy of Science)<\/span>
\nP-12<\/strong>\u00a0 \u00a0Spin orbit torque induced Bloch and N\u00e9el domain-wall motion and field-free switching in synthetic antiferromagnets<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 Bowen Shen 1,2,3<\/sup>, Meiyin Yang 1,2<\/sup> and Jun Luo 1,2<\/sup><\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 (1 Key Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences,<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 2 Institute of Microelectronics, Chinese Academy of Sciences,<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 3 School of Integrated Circuits, University of Chinese Academy of Sciences)<\/span>
\nP-13<\/strong>\u00a0 \u00a0Study on Cu CMP method using the SUAM for backend process<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u25cbSoma Yamamoto, Kohei Fujioka, Ayumi Nakato, Edmund Soji Otabe and Keisuke Suzuki<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 (Graduate School of Computer Science and Systems Engineering, Kyushu Institute of Technology)<\/span>
\nP-14\u00a0<\/strong> \u00a0Liquid Film Thickness and Agitation Distribution of Two-Fluid Jet Impingement Surface for Post-CMP Cleaning<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u25cbNaoto Doi 1<\/sup>, Shinsuke Watanabe 1<\/sup>, Hiroki Takahashi 2<\/sup>, Satomi Hamada 2<\/sup>, Masayoshi Imai 2<\/sup>, and Toshiyuki Sanada 1<\/sup><\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 (1 Department of Mechanical Engineering, Shizuoka University, <\/span>2 Ebara Corporation)<\/span>
\nP-15\u00a0<\/strong> \u00a0Three-Dimensional Numerical Simulation of the Replacement of a Chemical with Water during Single-Wafer Spin Rinsing<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u25cbYoshinori Jinbo and Toshiyuki Sanada<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 (Dept. of Mechanical Engineering, Shizuoka Univ.)<\/span>
\nP-16 (LN)\u00a0<\/strong> \u00a0 (with drawn)\u00a0 <\/span><\/strong>Analyse the OHAD optimized mechanism on IGZO TFT for 3D-DRAM by TCAD simulation
\nYanyu Yang 1,2,3<\/sup>, Yupeng Lu 1,2,3<\/sup>, Shuang Liu 1,2,3<\/sup>\uff0cRenjie Jiang 1,2,3<\/sup> , Jie Luo 1,2,3<\/sup>, Yunjiao Bao 1,2,3<\/sup>,
\nPeng Wang 1,2,3<\/sup>, Gaobo Xu* 1,2<\/sup>, Huaxiang Yin 1,2,3
\n<\/sup>(1 Key Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences,
\n2 Institute of Microelectronics, Chinese Academy of Sciences
\n3 School of Integrated Circuits, University of Chinese Academy of Sciences)\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0<\/span>
\nP-17 (LN)\u00a0<\/strong> Thermal Stability of Cu\/ZrN\/Ru\/Si structure for n TSV
\nMasaru Sato and Mayumi B. Takeyama
\n(School of Earth, Energy and Environmental Engineering, Faculty of Engineering, Kitami Institute of Technology)<\/span><\/p>\n

Day-2 October 4, 2024 (FRI)\u00a0 \u00a0<\/span><\/strong><\/span><\/p>\n

Session 7: Advanced Packaging<\/span><\/strong><\/span>
\n10:00 – 10:30\u00a0 \u00a07-1 (Invited Talk)<\/strong>\u00a0 \u00a0 Advanced Panel Level Packing Process Based on Plasma Etching Technology for 3D Chiplets Integration<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 Yasuhiro Morikawa<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 (ULVAC, Inc.)<\/span>
\n10:30 – 10:50\u00a0 \u00a07-2<\/strong> \u00a0 \u00a0Structural Strategies for Bendable Multi-Layer Interconnections Based on Fan-Out Wafer-Level Packaging for
\nFlexible Hybrid Electronics<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u25cbChang Liu 1<\/sup>, Jiayi Shen 1<\/sup>, Atsushi Shinoda 1<\/sup>, Han Zhang 1<\/sup>, Tetsu Tanaka 1,2<\/sup> and Takafumi Fukushima 1,2<\/sup><\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 (1 Graduate School of Engineering, Tohoku University<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 2 Graduate School of Biomedical Engineering, Tohoku University)<\/span>
\n10:50 – 11:10\u00a0 \u00a07-3<\/strong>\u00a0 \u00a0Via Last TSV Processes Impacts on TSV Proximity Effect for WoWoW Integration<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u25cbMasaki Haneda, Takuhiro Miyawaki, Naoki Komai, Kan Shimizu, Yoshihisa Kagawa and Hayato Iwamoto<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 (Sony Semiconductor Solutions Corporation)<\/span>
\n11:10 – 11:30\u00a0 \u00a07-4<\/strong>\u00a0 \u00a0Development of high-accuracy bonding technology for three-layer stacking structure with 6 \u00b5m-pitch Chip
\non Wafer Cu-Cu hybrid bonding<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u25cbTakahiro Kamei, Akihiro Urata, Akihisa Sakamoto, Takaaki Hirano, <\/span>Kan Shimizu, Yoshihisa Kagawa, Hayato Iwamoto”<\/span><\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 (Sony Semiconductor Solutions Corporation)<\/span><\/p>\n

11:30 – 11:45\u00a0 \u00a0Break<\/span><\/strong><\/span><\/p>\n

Session 8: Reliability & Metrology<\/span><\/strong><\/span>
\n11:45 – 12:15\u00a0 \u00a08-1 (Invited Talk)\u00a0<\/strong> \u00a0Reliability Challenges for Advanced Ru-AG BEOL Systems<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 Kristof Croes <\/span>(imec)<\/span><\/span>
\n12:15 – 12:35\u00a0 \u00a08-2<\/strong>\u00a0 \u00a0Analyze of the VTH shift saturation effect on NBS by experiment and TCAD simulation
\n<\/span>Yanyu Yang 1,2,3<\/sup>, Yupeng Lu 1,2,3<\/sup>, Shuang Liu 1,2,3<\/sup>, Renjie Jiang 1,2,3<\/sup>, Jie Luo 1,2,3<\/sup>, Yunjiao Bao 1,2,3<\/sup>, Peng Wang 1,2,3<\/sup>,
\nGaobo Xu* 1,2<\/sup>, Huaxiang Yin 1,2,3<\/sup><\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 (1 Key Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences,<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a02 Institute of Microelectronics, Chinese Academy of Sciences,<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a03 School of Integrated Circuits, University of Chinese Academy of Sciences)<\/span><\/p>\n

12:35 – 14:05\u00a0 \u00a0Lunch Break<\/span><\/strong><\/span><\/p>\n

Session 9: Process Technology<\/span><\/strong><\/span>
\n14:05 – 14:25\u00a0 \u00a09-1\u00a0<\/strong> \u00a0SiO2<\/sub> Etching Mechanism by Vapor HF\/ Methanol Etching<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u25cbHiroto Ohtake 1<\/sup>, Takashi Hattori 1,2<\/sup>, and Masaki Yamada 2<\/sup><\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 (1 Hitachi High-Tech Corporation, <\/span>2 Hitachi Ltd.)<\/span>
\n14:25 – 14:45\u00a0 \u00a09-2\u00a0<\/strong> \u00a0Formation and evaluation of ruthenium film using electroless platingECD<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 Takanobu Hamamura, Yuko Ishii, Tomohiro Shimizu, Takeshi Ito, and Shoso Shingubara<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 (Graduate School of Science and Engineering, Kansai University)<\/span>
\n14:45 – 15:05\u00a0 \u00a09-3<\/strong>\u00a0 \u00a0Roughness control of ALD-TIN thin film in 3D metal interconnects<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u25cbWeidu Qin, Chao Tian, Jiao Jin<\/span> , Chaoyang Guan, Baodong Han, Hongbo Sun, Chao Zhao
\n(<\/span>Beijing Superstring Academy of Memory Technology)<\/span><\/p>\n

15:05 – 15:20\u00a0 \u00a0Break<\/span><\/strong><\/span><\/p>\n

Session 10: BEOL Devices and New Materials<\/span><\/strong><\/span>
\n15:20 – 15:40\u00a0 \u00a010-1\u00a0<\/strong> \u00a0Impact of Source\/Drain Oxidation on Performance of IGZO Channel-all-Around (CAA) Transistors<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 Shuai Li 1<\/sup>, Long Huang 1<\/sup>, Wei Yu 1<\/sup>, Yansan Ma 1<\/sup>, Jing Zhang 1<\/sup>, Fuwang Yang 1<\/sup>, Pan Zeng 1<\/sup>, Peng Zhao 1<\/sup>, Yuqi Li 1<\/sup>,
\nJinjuan Xiang 1<\/sup>, liguo Chai 1<\/sup>, Zhengying Jiao 1<\/sup>, Yongqing Shen 1<\/sup>, Hongbo Sun 1<\/sup>, Baodong Han 1<\/sup>, Jiahui Sun 1<\/sup>,
\nMeichen Jin 1<\/sup>, Qi Hu 1<\/sup>, Xinhe Wang 1<\/sup>, Yang Bai 1<\/sup>, Chuanke Chen 2<\/sup>, Di Geng 2<\/sup>, ling Li 2<\/sup>, Guilei Wang 1<\/sup>*, and Chao Zhao 1<\/sup>*<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 (1 Beijing Superstring Academy of Memory Technology,<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a02 Institute of Microelectronics of the Chinese Academy of Sciences)<\/span>
\n15:40 – 16:00\u00a0 \u00a010-2<\/strong>\u00a0 \u00a0Manipulation of synthetic antiferromagnetic skyrmions array in continuous film by VCMA
\n<\/span>\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u25cbShuaiyu Gong 1,2,3<\/sup>, Meiyin Yang 1,2,3<\/sup>, and Jun Luo 1,2,3<\/sup><\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 (1 Key Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences,\u00a0<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a02 Institute of Microelectronics, Chinese Academy of Sciences,<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a03 School of Integrated Circuits, University of Chinese Academy of Sciences)<\/span>
\n16:00 – 16:20\u00a0 \u00a010-3<\/strong>\u00a0 \u00a0Catalyst-free Direct Growth of Graphene on Si substrate with High Power Pulsed Sputtering (HPPS)
\nPlasma with styrene as source molecules<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u25cbYuto Oishi 1<\/sup>, Masanori Shinohara 2<\/sup>, Fumihiko Maeda 3<\/sup>, and Takashi Matsumoto 4<\/sup><\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 (1 Graduate School of Engineer., Fukuoka Univ.<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a02 Dept. of Electrical Engineer., Fukuoka Univ.<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a03 Dept. of Information Electronics, Fukuoka Institute of Technology<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a04 Tokyo Electron Technology Solutions Limited)<\/span><\/p>\n

16:20 – 16:30\u00a0 \u00a0Closing Remark<\/span><\/strong><\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0Closing: <\/span>Mayumi B. Takeyama (Kitami Institute of Technology)<\/span><\/span><\/p>\n","protected":false},"featured_media":0,"template":"","txo_year":[65],"class_list":["post-423","cpt_admeta","type-cpt_admeta","status-publish","hentry","txo_year-65"],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/www.admeta.org\/2024\/wp-json\/wp\/v2\/cpt_admeta\/423","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.admeta.org\/2024\/wp-json\/wp\/v2\/cpt_admeta"}],"about":[{"href":"https:\/\/www.admeta.org\/2024\/wp-json\/wp\/v2\/types\/cpt_admeta"}],"wp:attachment":[{"href":"https:\/\/www.admeta.org\/2024\/wp-json\/wp\/v2\/media?parent=423"}],"wp:term":[{"taxonomy":"txo_year","embeddable":true,"href":"https:\/\/www.admeta.org\/2024\/wp-json\/wp\/v2\/txo_year?post=423"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}