{"id":198,"date":"2023-03-23T18:44:05","date_gmt":"2023-03-23T09:44:05","guid":{"rendered":"https:\/\/www.admeta.org\/wp2023\/?post_type=cpt_admeta&p=198"},"modified":"2023-10-07T13:39:15","modified_gmt":"2023-10-07T04:39:15","slug":"program-2023-en","status":"publish","type":"cpt_admeta","link":"https:\/\/www.admeta.org\/2023\/en\/cpt_admeta\/program-2023-en","title":{"rendered":"2023-9-en-Conference Program"},"content":{"rendered":"

Conference Program<\/span><\/h1>\n
\n
\n

October 12, 2023 (THU)\u3000<\/strong>Registration Desk Open 9:30<\/span><\/p>\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
Session 1: Opening Session
\n[Opening, Award Ceremony]<\/b><\/span>
\nChairperson: Takayasu Saito (Osaka Prefecture University)<\/span>
\n[Plenary Talks]<\/b><\/span>
\nChairperson: Mayumi B. Takeyama (Kitami Institute of Technology)<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 Noriaki Matsunaga (Applied Materials Japan, Inc.)<\/span><\/td>\n<\/tr>\n
10:00-10:10<\/span><\/td>\nOpening Session:<\/span>
\nMunehiro Tada (NanoBridge Semiconductor, Inc.)<\/span><\/td>\n<\/tr>\n
10:10-10:20<\/span><\/td>\nAward Ceremony:<\/span>
\nHideaki Machida (Gas-Phase Growth LTD.)<\/span><\/td>\n<\/tr>\n
10:20-11:00<\/span><\/td>\n1-1 Plenary Talk 1:<\/span>
\nInterconnect Past, Present and Future<\/span>
\nKrishna Saraswat<\/span>
\n(Stanford University)<\/span><\/td>\n<\/tr>\n
11:00-11:40<\/span><\/td>\n1-2 Plenary Talk 2:<\/span>
\nInterconnect for the next 10 years: trends, inflection points and future options<\/span>
\nZsolt Tokei<\/span>
\n(imec)<\/span><\/td>\n<\/tr>\n
11:40-12:20<\/span><\/td>\n1-3 Plenary Talk 3:<\/span>
\nChiplet and Advanced Packaging Technologies for HPC and AI<\/span>
\nDale McHerron<\/span>
\n(IBM)<\/span><\/td>\n<\/tr>\n
12:20-13:40<\/span><\/td>\nLunch<\/span><\/td>\n<\/tr>\n
Session 2: Advanced Integration<\/b><\/span>
\nChairperson: Hiroto Ohtake (Hitachi High-Tech Corporation)<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 Shoko S. Ono (Mitsui Chemicals, Inc.)<\/span><\/td>\n<\/tr>\n
13:40-14:05<\/span><\/td>\n2-1 Invited Talk 1:<\/span>
\nFully Subtractive Ru Topvia as Post-Cu Alternative Metal Interconnects<\/span>
\nKoichi Motoyama<\/span>
\n(IBM Research)<\/span><\/td>\n<\/tr>\n
14:05-14:30<\/span><\/td>\n2-2 Invited Talk 2:<\/span>
\nAdvanced Logic Process Technologies toward 2nm and Beyond<\/span>
\nTomonari Yamamoto
\n(Tokyo Electron Ltd.)<\/span><\/td>\n<\/tr>\n
14:30-14:50<\/span><\/td>\n\u00a02-3\u00a0<\/span>Superconducting Nb Interconnects for Cryo-CMOS and Superconducting Digital Logic Applications<\/span>
\n* Hideaki Numata1<\/sup>, N. Iguchi1<\/sup>, M. Tanaka2<\/sup>, K. Okamoto1<\/sup>, S. Miura1<\/sup>, K. Uchida3<\/sup>, H. Ishikuro4<\/sup>, T. Sakamoto1<\/sup>, and M. Tada1<\/sup>
\n(1 NanoBridge Semiconductor, Inc., 2 Nagoya University, 3 The University of Tokyo, 4 Keio University)<\/span><\/td>\n<\/tr>\n
14:50-15:05<\/span><\/td>\nBreak<\/span><\/td>\n<\/tr>\n
Session 3: 3D<\/b><\/span>
\nChairperson: Takafumi Fukushima (Tokoku University)<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 Toyohiro Aoki (IBM Research-Tokyo)<\/span><\/td>\n<\/tr>\n
15:05-15:30<\/span><\/td>\n3-1 Invited Talk 3:\u00a0<\/span>Interconnections in Advanced Semiconductor Packaging<\/span>
\nKatsuaki Suganuma<\/span>
\n(Osaka University)<\/span><\/td>\n<\/tr>\n
15:30-15:55<\/span><\/td>\n3-2 Invited Talk 4:<\/span>
\nAdvances In Dielectric Based Wafer to Wafer Bonding<\/span>
\n* Lan Peng1<\/sup>, S. Iacovo1<\/sup>, F. Inoue2<\/sup>, J. De Vos1<\/sup>, B. Schoenaers3<\/sup>, A. Stesmans3<\/sup>, V. V. Afanas\u2019ev2<\/sup>, A. Miller1<\/sup>, G. Beyer1<\/sup>, and E. Beyne1<\/sup><\/span>
\n(1 imec, 2 Yokohama National University, 3 University of Leuven)<\/span><\/td>\n<\/tr>\n
15:55-16:15<\/span><\/td>\n3-3\u00a0<\/span>Development of Large-Scale Connections of Wafer-Level Face-to-Back Structure with Cu-Cu Hybrid Bonding<\/span>
\n* Yukako Ikegami, Masaki Haneda, Kengo Kotoo, Kan Shimizu, Yoshihisa Kagawa, and Hayato Iwamoto
\n(Sony Semiconductor Solutions Corporation)<\/span><\/td>\n<\/tr>\n
16:15-16:35<\/span><\/td>\n3-4\u00a0<\/span>Cu-SiO2<\/span> Surface Activation by Ozone-Ethylene-Radical Process for Chip-to-Chip and Chip-to-Wafer Hybrid Bonding<\/span>
\n* M. Murugesan1<\/sup>, K. Mori2<\/sup>, B. Tanaka1<\/sup>, H. Hashimoto2<\/sup>, T. Nishiguchi3<\/sup>, T. Shino3<\/sup>, and T. Fukushima1<\/sup>
\n(1 Tohoku University, 2 T-MICRO, 3 Meiden Nanoprocess Innovations, INC.)<\/span><\/td>\n<\/tr>\n
16:35-16:55<\/span><\/td>\n3-5\u00a0<\/span>Releasable Direct Bonding for Fine Pitch Die to Wafer Hybrid Bonding<\/span>
\n* Koki Onishi1<\/sup>, Tomoya Iwata1<\/sup>, Akira Uedono2<\/sup>, and Fumihiro Inoue1<\/sup>
\n(1 Yokohama National University, 2 University of Tsukuba)<\/span><\/td>\n<\/tr>\n
16:55-17:10<\/span><\/td>\nBreak<\/span><\/td>\n<\/tr>\n
Session 4: Contact & Metallization<\/b><\/span>
\nChairperson: Osamu Nakatsuka (Nagoya University)<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 Takashi Matsumoto(Tokyo Electron Technology Solutions Ltd.)<\/span><\/td>\n<\/tr>\n
17:10-17:35<\/span><\/td>\n4-1 Invited Talk 5:<\/span>
\nContact Resistance in Vertically Stacked Nanosheet FETs for Sub-3-nm Technology Node<\/span>
\nHyun-Yong Yu<\/span>
\n(Korea University)<\/span><\/td>\n<\/tr>\n
17:35-17:55<\/span><\/td>\n4-2\u00a0<\/span>Investigation of oxidation impact on Cu diffusivity in ultra-thin PVD-Co(W) films<\/span>
\nYubin Deng<\/span>
\n(The Univ. of Tokyo)<\/span><\/td>\n<\/tr>\n
17:55-18:15<\/span><\/td>\n4-3\u00a0<\/span>Organosilane Pretreatment for Roughness Improvement of Electroless NiB Films<\/span>
\n* Naoki Yamada, Takeyasu Saito, and Naoki Okamoto
\n(Osaka Metropolitan University)\u00a0<\/span><\/td>\n<\/tr>\n
Poster Session<\/b><\/span>
\nChairperson: Shunichi Hizume (Lam Research GK)<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 Atsuhiro Tsukune (The University of Tokyo)<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 Takeshi Momose (Kumamoto University)<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 Tadashi Fukuda (Tokyo Institute of Technology)<\/span><\/td>\n<\/tr>\n
18:20-20:00<\/span><\/td>\nP-1\u00a0<\/span>CMP characteristics of IGZO thin film with a variety of process parameters<\/span>
\n* Wang Wei, Zeng Ming, Ping Yan Lei, Tian Chao, Sun Hong Bo, Cui Kai, Wang Gui Lei, and Zhao Chao
\n(Beijing Superstring Academy of Memory Technology)<\/span><\/td>\n<\/tr>\n
P-2\u00a0<\/span>A study of the effect of wet cleaning processes on tungsten post etch with different techniques<\/span>
\n* Chaoyang Guan, Chaoyang Guan, Jingheng Meng, Dong Luo, Jian Liu, Jiao Jin, Baodong Han, Zhao Liu, Hongbo Sun, Yanlei Ping, Ming Zeng, Guilei Wang, and Chao Zhao<\/span>
\n(Beijing Superstring Academy of Memory Technology)<\/span><\/td>\n<\/tr>\n
P-3\u00a0<\/span>Graphene Deposition with High Power Pulsed Sputtering (HPPS) Plasma<\/span>
\n* Yuto Ooishi1<\/sup>, Atsuya Kuwada1<\/sup>, Fumihiko Maeda2<\/sup>, Masanori Shinohara3<\/sup>, Satoshi Tanaka4<\/sup>, and Takashi Matsumoto4<\/sup>
\n(1 Fukuoka University, 2 Fukuoka Institute of Technology, 3 Fukuoka University, 4 Tokyo Electron Technology Solutions Co. Ltd.)<\/span><\/td>\n<\/tr>\n
P-4\u00a0<\/span>Direct Deposition of Graphene on Si with High Power Pulsed Sputtering (HPPS) Plasma<\/span>
\n* Yuto Ooishi1<\/sup>, Atsuya Kuwada1<\/sup>, Fumihiko Maeda2<\/sup>, Masanori Shinohara3<\/sup>, Satoshi Tanaka4<\/sup>, and Takashi Matsumoto4<\/sup>
\n(1 Fukuoka University, Fukuoka Institute of Technology, 3 Fukuoka University, 4 Tokyo Electron Technology Solutions Co. Ltd.)<\/span><\/td>\n<\/tr>\n
P-5\u00a0<\/span>Buried bitline fabrication in 4F2<\/span> DRAM cell Technology<\/span>
\nZhao Liu<\/span>
\n(Beijing Superstring Academy of Memory Technology)<\/span><\/td>\n<\/tr>\n
P-6\u00a0<\/span>Extracting BL Equivalent Thickness Through the Calculation of Coupling Capacitance<\/span>
\n* Jianpeng Jiang, Yong Yu, Zhixuan Li, Lansong Ba, Bryan Kang, Guilei Wang, and Chao Zhao
\n(Beijing Superstring Academy of Memory Technology)<\/span><\/td>\n<\/tr>\n
P-7\u00a0<\/span>Investigation of Process Variation Effects in Interconnect Capacitance with Double Patterning Technology<\/span>
\n* Honggang Liang, Yong Yu, Jingfei Zhu, Yanan Lu, Bryan Kang, Guilei Wang, and Chao Zhao
\n(Beijing Superstring Academy of Memory Technology)<\/span><\/td>\n<\/tr>\n
P-8\u00a0<\/span>Stabilization and switching properties of the easy-cone magnetic free layer in magnetic tunnel junctions<\/span>
\nQi Hu, Nan Yang, Yunsen Zhang, Huihui Li, Haochang Lv, Gengfei Li, Guilei Wang, Chao Zhao, Yong Yu, and * Bowen Dong<\/span>
\n(Beijing Superstring Academy of Memory Technology)<\/span><\/td>\n<\/tr>\n
P-9\u00a0<\/span>Low sheet resistance buried metal bit line realized by high temperature metal CVD process in vertical channel transistor arrays<\/span>
\n* Chao Tian1<\/sup>, Yanlei Ping1<\/sup>, Naizheng Wang1<\/sup>, Baodong Han1<\/sup>, Zhao Liu1<\/sup>, Yongjie Li1<\/sup>, Jingheng Meng1<\/sup>, Hongbo Sun1<\/sup>, Guilei Wang1<\/sup> , Deyuan Xiao2<\/sup>, Jian Chu2<\/sup>, Guangsu Shao2<\/sup>, Jie Shen2<\/sup>, and Chao Zhao1<\/sup>
\n(1 Beijing Superstring Academy of Memory Technology, 2 ChangXin Memory Technologies, Inc.)<\/span><\/td>\n<\/tr>\n
P-10\u00a0<\/span>Effects of defect clustering on the shape of TDDB lifetime distribution and screening effectiveness<\/span>
\n* Koichi Endo and Shinji Yokogawa<\/span>
\n(Info-Powered Energy System Research Center, The Univ. of Electro-Communications)<\/span><\/td>\n<\/tr>\n
P-11\u00a0<\/span>A Transient Liquid Phase Bonding Using Sn\/Cu Multiple layers<\/span>
\n* Dong-Yurl Yu1,2<\/sup>, Junhyuk Son1<\/sup>, Yun-Chan Kim1,2<\/sup>, Shin-il Kim1,2<\/sup>, Dongjin Byun2<\/sup> and JungHwan Bang1<\/sup>
\n(1 Korea Institute of Industrial Technology (KITECH), 2 Korea University<\/span><\/td>\n<\/tr>\n
P-12\u00a0<\/span>Efficient SiC polishing method using ion implantation process<\/span>
\n* Sho Takitani, Hideaki Nishizawa, Akiyoshi Baba, and Keisuke Suzuki
\n(Kyushu Institute of Technology<\/span><\/td>\n<\/tr>\n
P-13\u00a0<\/span>Current induced field-free magnetic switching in synthetic antiferromagnets by ion implantation<\/span>
\n* Meiyin Yang, Bowen Shen, and Jun Luo
\n(Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS))<\/span><\/td>\n<\/tr>\n
P-14\u00a0<\/span>VCMA control of skyrmion generation and annihilation in SAF<\/span>
\n* Shuaiyu Gong1,2<\/sup>, Meiyin Yang1<\/sup>, and Jun Luo1<\/sup>
\n(1 Institute of Microelectronics of the Chinese Academy of Sciences, 2 University of Chinese Academy of Sciences)<\/span><\/td>\n<\/tr>\n
P-15\u00a0<\/span>SOT-MRAM bit-cell architecture Based on Unipolar Current Inputs<\/span>
\n* Bowen Yang1,2<\/sup>, Lei Zhao1,2<\/sup>, * Meiyin Yang1,2<\/sup>, Tengzhi Yang1,2<\/sup>, Jianfeng Gao1<\/sup>, and Jun Luo1,2<\/sup>
\n(1 Institute of Microelectronics of the Chinese Academy of Sciences, 2 University of Chinese Academy of Sciences (UCAS))<\/span><\/td>\n<\/tr>\n
P-16\u00a0<\/span>Characterization of ZrOx<\/sub> film deposited at low-temperature process<\/span>
\n* Mayumi B. Takeyama and Masaru Sato<\/span>
\n(Kitami Institute of Technology)<\/span><\/td>\n<\/tr>\n
P-17\u00a0<\/span>Preparation of SiOx film at low-temperature process for 3D-LSI<\/span>
\n* Masaru Sato and Mayumi B. Takeyama
\n(Kitami Institute of Technology)<\/span><\/td>\n<\/tr>\n
P-18\u00a0<\/span>Selective chemical vapor deposition of Cu using CuI on fine-structure<\/span>
\n* Gento Toyoda, Satoshi Yamauchi<\/span>
\n(Quantum Beam Science, Graduate School of Ibaraki University)<\/span><\/td>\n<\/tr>\n
P-19\u00a0<\/span>Threading Dislocations control in SiGe\/Si heterojunctions for hole spin qubits<\/span>
\n* Zhenzhen Kong 1,2, Zonghu Li 3, Gang Cao 3, Yiwen Zhang 1,2,Tianchun Ye 1,2, Chao Zhao 4, and Guilei Wang 4,5<\/span>
\n(Institute of Microelectronics of the Chinese Academy of Sciences)<\/span><\/td>\n<\/tr>\n
P-20\u00a0<\/span>In Situ observation of initial stage of Cobalt ALD using reflected light measurement<\/span>
\n* Shunsuke Kimura, Jun Yamaguchi, Noboru Sato, Atsuhiro Tsukune, Takeshi Momose, and Yukihiro Shimogaki<\/span>
\n(The University of Tokyo)<\/span><\/td>\n<\/tr>\n
P-21\u00a0<\/span>Development of Molybdenum Atomic Layer Deposition Process for Next Generation ULSI Interconnect<\/span>
\n* Haonan Liu,Yuxuan Wu, Jun Yamaguchi, Noboru Sato, Atsuhiro Tsukune, Takeshi Momose, and Yukihiro Shimogaki<\/span>
\n(The University of Tokyo)<\/span><\/td>\n<\/tr>\n
P-22\u00a0<\/span>Development of low-resistivity copper thin film formation process on polymer using supercritical fluid deposition<\/span>
\n* Yusuke Nakajima, Yukihiro Shimogaki, and Takeshi Momose<\/span>
\n(The University of Tokyo)<\/span><\/td>\n<\/tr>\n
P-23\u00a0<\/span>Study of estimating vapor pressure of metal complex with COSMO-SAC method and its improvement<\/span>
\n* Noboru Sato, Jun Yamaguchi, Wu Yuxuan, Momoko Deura, Takeshi Momose, and Yukihiro Shimogaki<\/span>
\n(The University of Tokyo)<\/span><\/td>\n<\/tr>\n
P-24\u00a0<\/span>Study of Cu precursors Adsorption Behavior on Cu (111) Surface by Density Functional Theory<\/span>
\n* Yuxuan Wu, Jun Yamaguchi, Noboru Sato, Haonan Liu, Atsuhiro Tsukune, Takeshi Momose, and Yukihiro Shimogaki<\/span>
\n(The University of Tokyo)<\/span><\/td>\n<\/tr>\n
P-25\u00a0<\/span>Examination of Co-ALD process using CCTBA precursor * Jun Yamaguchi, Noboru
\nSato, Atsuhiro Tsukune, Takeshi Momose, and Yukihiro Shimogaki<\/span>
\n(The University of Tokyo)<\/span><\/td>\n<\/tr>\n
P-26\u00a0<\/span>Interfacial reaction and microstructure formation of Sn-based solder joint using selective induction bonding<\/span>
\n* Min-Su Kim, So-Jeong Lee, and Yong-Ho Ko<\/span>
\n(Korea Institute of Industrial Technology)<\/span><\/td>\n<\/tr>\n
\u00a0<\/span><\/td>\nP-27 [Late News] \u00a0<\/span>Non-resetting Spin Logics by Field-free Magnetic Switching
\n<\/span>* Yanru Li, Meiyin Yang, and Jun Luo<\/span>
\n(Institute of Microelectronics, Chinese Academy of Sciences (IMECAS))<\/span><\/td>\n<\/tr>\n
\u00a0<\/span><\/td>\nP-28 [Late News] \u00a0<\/span>The fabrication of STT-MRAM memory cell with ultra-low switching power<\/span>
\n* Chengchang Yang1<\/sup> , Sinan Zou1<\/sup>, Jianfeng Gao1<\/sup>, Meiyin Yang1<\/sup>, Jing Xu1,2<\/sup>, Yan Cui1<\/sup>, and Jun Luo1,2<\/sup><\/span>
\n(1 Institute of Microelectronics, Chinese Academy of Sciences, <\/span>2 University of Chinese of Academy Sciences (UCAS))<\/span><\/td>\n<\/tr>\n
\u00a0<\/span><\/td>\nP-29 [Late News] \u00a0<\/span>Adhesion Improvement of Multilayer Graphene Formed by Solid Phase Deposition on SiO2<\/sub> with Ti Adhesion Layer<\/span>
\n* Takumi Nishimura1<\/sup>, Motonobu Sato2<\/sup>, and Kazuyoshi Ueno1,2<\/sup><\/span>
\n(1 Shibaura Institute of Technology, 2 SIT)
\n<\/span><\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n

October 13, 2023 (FRI)<\/strong>Registration Desk Open 9:30<\/span><\/p>\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
Session 5: ALD & ALE<\/b><\/span>
\nChairperson: Kan Takeshita (Mitsubishi Chemical Corporation)<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 Kazunari Kurita (SUMCO Corporation)<\/span><\/td>\n<\/tr>\n
<\/td>\nOpening<\/span><\/td>\n<\/tr>\n
10:00-10:25<\/span><\/td>\n5-1 Invited Talk 6:<\/span>
\nPlasma Etching Technology Next Milestone of Assurance Energy and Environment<\/span>
\nKenji Ishikawa<\/span>
\n(Nagoya University)<\/span><\/td>\n<\/tr>\n
10:25-10:50<\/span><\/td>\n5-2 Invited Talk 7:<\/span>
\nDevelopment of Precursors for Area Selective Deposition<\/span>
\n* Kohei Iwanaga1<\/sup>, Teppei Hayakawa1<\/sup>, Yuki Yamamoto1<\/sup>, Hiroyuki Oike1<\/sup>, Ryosuke Ebihara1<\/sup>, and Ken-ichi Tada2<\/sup><\/span>
\n(1 TOSOH Corporation, 2 Sagami Chemical Research Institute)<\/span><\/td>\n<\/tr>\n
10:50-11:10<\/span><\/td>\n5-3\u00a0<\/span>Surface-Independent AlN ALD on Cu and SiO2<\/span> Surfaces using Hydrazine for an Etch Stop Layer Application<\/span>
\n* Hayato Murata, Yoshifumi Wada, and Hideharu Shimizu<\/span>
\n(Taiyo Nippon Sanso)<\/span><\/td>\n<\/tr>\n
11:10-11:25<\/span><\/td>\nBreak<\/span><\/td>\n<\/tr>\n
Session 6: 3D & BEOL device1<\/b><\/span>
\nChairperson: Shinji Yokogawa (The University of Electro-communications)<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 Seiji Muranaka (Renesas Electronics Corporation)<\/span><\/td>\n<\/tr>\n
11:25-11:50<\/span><\/td>\n6-1 Invited Talk 8:<\/span>
\nBoosting Chip Connectivity through Advanced Packaging and BEOL Integration<\/span>
\nHuaqiang Wu<\/span>
\n(Tsinghua University)<\/span><\/td>\n<\/tr>\n
11:50-12:10<\/span><\/td>\n6-2\u00a0<\/span>Demonstration of Enhanced Remnant Polarization (20\u03bcC\/cm2<\/sup>) in Low Thermal Budget (300o<\/sup>C) ferroelectric Hf0.5<\/span>Zr0.5<\/span>O2<\/span><\/span>
\n* Peng. Yuan, Xueli Ma, Jibin Leng, Qingjie Luan, Yongqing Shen, Zhengying Jiao, Liguo Chai, Jinjuan Xiang, Guilei Wang*, Chao Zhao<\/span>
\n(Beijing Superstring Academy of Memory Technology)<\/span><\/td>\n<\/tr>\n
12:10-12:30<\/span><\/td>\n6-3\u00a0<\/span>A Novel Design Methodology for Highly Reliable Operation for 2T0C DRAM Application Based on IGZO CAA Ferroelectric FETs<\/span>
\n* Jing Liang, Peng Yuan, Jin Dai, Jinjuan Xiang, Menglong Zhou, Zhixuan Li, Yong Yu, Guilei Wang1, Jing Zhang, Bryan Kang, Chao Zhao<\/span>
\n(Beijing Superstring Academy of Memory Technology)<\/span><\/td>\n<\/tr>\n
12:30-13:50<\/span><\/td>\nLunch Break<\/span><\/td>\n<\/tr>\n
Session 7: Metallization & CMP<\/b><\/span>
\nChairperson: Takeshi Nogami (IBM Corporation)<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 Keisuke Suzuki (Kyushu Institute of Technology)<\/span><\/td>\n<\/tr>\n
13:50-14:15<\/span><\/td>\n7-1 Invited Talk 9:<\/span>
\nMaterials to Systems Co-opitimization (MSCOTM<\/sup>) Platform & its Application towards Next Generation Advanced Interconnect Development for Logic Nodes<\/span>
\n* Ashish Pal, Zhebo Chen, Gaurav Thareja, Buvna Ayyagari, Xianmin Tang, and El Mehdi Bazizi<\/span>
\n(Applied Materials Inc.)<\/span><\/td>\n<\/tr>\n
14:15-14:40<\/span><\/td>\n7-2 Invited Talk 10:<\/span>
\nCMP Process Technology for 3D Flash Memory<\/span>
\nYumiko Kataoka<\/span>
\n(KIOXIA Corporation)<\/span><\/td>\n<\/tr>\n
14:40-15:00<\/span><\/td>\n7-3\u00a0<\/span>Novel Pattern and Improved CVD Process for MLG \/ Ni Hybrid Patch Antenna with High Crystallinity and Uniformity<\/span>
\n* Kouta Masukawa1<\/sup> and Kazuyoshi Ueno1, 2<\/sup>
\n(1 Shibaura Institute of Technology, 2 International Research Center of Green Electronics<\/span><\/td>\n<\/tr>\n
15:00-15:20<\/span><\/td>\n7-4\u00a0<\/span>Study on nano carbon fine particles based on C60 molecule for diamond CMP<\/span>
\n* Keisuke Suzuki, Hiroaki Iura, Junpei Takeiri, Masaki Morii, Daisuke Hantani, Panart Khajornrungruang, and Hideaki Nishizawa<\/span>
\n(Kyushu Institute of Technology)<\/span><\/td>\n<\/tr>\n
15:20-15:35<\/span><\/td>\nBreak<\/span><\/td>\n<\/tr>\n
Session 8: Contact & BEOL Devices2<\/b><\/span>
\nChairperson: Akihiro Kajita (KIOXIA Corporation)<\/span>
\n\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 Eiichiro Sudo (Tokyo Electron Ltd.)<\/span><\/td>\n<\/tr>\n
15:35-15:55<\/span><\/td>\n8-1 <\/span>Non-resetting Spin Logics by Field-free Magnetic Switching<\/span>
\nYanru Li<\/span>
\n(Institute of Microelectronics of the Chinese Academy of Sciences)<\/span><\/td>\n<\/tr>\n
15:55-16:15<\/span><\/td>\n8-2\u00a0<\/span>Co Silicide Formed by Chemical Vapor Deposited Cobalt and Carbon Pre-Implantation<\/span>
\n* Yanping He1,3<\/sup>, Jianfeng Gao1<\/sup>, Jing Xu1<\/sup>, Weibin Liu1<\/sup>, Jinbiao Liu1<\/sup>, Junfeng Li1<\/sup>, Yongjie Li2<\/sup>, Chao Tian2<\/sup>,Jun Zhou2<\/sup>, Yuke Li2<\/sup>, Hongbo Sun2<\/sup>, Shujuan Mao2<\/sup>, Jun Luo1,3<\/sup>, Guilei Wang2<\/sup>, and Chao Zhao2<\/sup>
\n(Institute of Microelectronics, Chinese Academy of Sciences, 2 Beijing Superstring Academy of Memory Technology, 3 University of Chinese Academy of Sciences (UCAS))<\/span><\/td>\n<\/tr>\n
Closing remark<\/b><\/span><\/td>\n<\/tr>\n
16:15-16:25<\/span><\/td>\nClosing<\/span><\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n

All sessions will be conducted in English.<\/span><\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

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