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Advanced Metallization Conference 2019
29th Asian Session
 Conference Program

October 10, 2019
Session 1: Opening Session
9:30-9:50 Opening Remarks: S. Yokogawa, General Chair [The Univ. of Electro-Communications]
Award Ceremony :
9:50-10:30
(1-1)
Plenary: The Future of Technology Scaling [Intel] R. A. Brain
10:30-10:40 (Break 10 min)
Session 2: Advanced Integration and Processes
Chairperson: J. Leu (National Chiao Tung Univ.)
10:40-11:10
(2-1)
Invited: Challenges Influencing the Next Generation BEOL Interconnect Technology [IBM Research] G. Bonilla
11:10-11:30
(2-2)
Saturation of Sb1+ Concentration in Heavily Sb-doped n+- Ge Epitaxial Layers [Nagoya Univ.]○ J. Jeon , S. Shibayama, and O. Nakatsuka
11:30-11:50
(2-3)
Impact of Ge Pre-amorphization Implantation (Ge PAI) on CoTi/n+-Si Contact in Co Interconnects [1 Chinese Academy of Sciences, 2 Univ. of Chinese Academy of Sciences (UCAS)] ○D. Zhang1,2, A. Du1, J. Xu1*, S. Mao1, X. Luo1,2, Y. Liu1,2, J. Gao1, G.i Wang1, J. Li1, W. Wang1,2, D. Chen1,2, C. Zhao1,2, T. Ye1,2 and J. Luo1,2*
11:50-12:50 (Break for Lunch)
Session 3: Emerging Technology (STT-MRAM, ReRAM)
Chairperson: X. Gu (Western Digital)
12:50-13:20
(3-1)
Invited: Impact of STT-MRAM and CMOS/MTJ Hybrid NV-Logic from NV-MCU to NV- Brain-Inspired AI Processors [Tohoku Univ.] T. Endo
13:20-13:50
(3-2)
Invited: Etch Challenges and Solutions in MRAM Production [Leuven Instruments] K. Xu
13:50-14:10
(3-3)
Low energy Switching of a FM/HM/FM Sandwich Structure Driven by Spin Orbit Torque [Chinese Academy of Sciences]○ S. Wang , M. Yang, J. Luo, C. Zhao, W. Wang, and Tianchun Ye
14:10-14:20 (Break 10 min)
Session 4: Advanced Metallization
Chairperson: M. Baklanov (North China Univ.)
14:20-14:50
(4-1)
Invited: Integration options for alternative metals [imec] C. J. Wilson
14:50-15:20
(4-2)
Invited: Development of a CMOS-compatible Contact Technology for III-V Materials [CEA Leti] P. Rodriguez
15:20-15:40
(4-3)
Improvement of the Thermal Stability for Ultra-thin Tantalum Silicide by Carbon Pre-silicidation Implantation [1 Institute of Microelectronics of Chinese Academy of Sciences, 2 Univ. of Chinese Academy of Sciences] J. Xu1, J. Gao1, X. Luo1,2, D. Zhang1 2, S. Mao1, J. Li1, C. Zhao1,2, **,W. Wang1,2, B. Gao1, D. Chen1,2, T. Ye1,2 and J. Luo1,2
15:40-15:50 (Break 10 min)
Session 5: CMP, Cleaning
Chairperson: K. Suzuki (Kyushu Institute of Technology)
15:50-16:20
(5-1)
Invited: Determining Instantaneous Removal Rates in Metal Chemical Mechanical Planarization [The Univ. of Arizona/Araca Inc.] A. Philipossian
16:20-16:40
(5-2)
Development of Chemical Mechanical Planarization(CMP) for 4H-SiC substrate by water-soluble cluster of Fullerene [1 Kyushu Institute of Technology, 2 National Taiwan Univ. of Science and Technology] ○ Y.-H. Tsai 1, C.-C. A.Chen 2, K. Suzuki 1, and S.-F. Chiu 2
16:40-17:00
(5-3)
Study on Chemical factors on Nano Colloidal Silica fine particles using Critic acid for Cu-CMP [Kyushu Inst. of Technology] ○S. Sirisawat, F. Hisayoshi, P. Khajornrungruang, and K. Suzuki
17:00-17:20
(5-4)
Effect of Conditioner Disc Wear on Frictional, Thermal, Kinetic and Pad Micro-Textural Attributes of Silicon Dioxide and Tungsten Chemical Mechanical Planarization [1 Univ. of Arizona, 2 Araca Inc.] J. C. Mariscal1, H. Dadashazar1,2, J. McAllister1, Y. Sampurno1,2, and A. Philipossian 1,2
Poster Session (17:30-19:30)
Chairperson: K. Maekawa (Renesas Electronics)
P-1 Synthesis of Ni Thin Film by Supercritical Fluid Chemical Deposition Technique [Univ. of Yamanashi] ○Sudiyarmanto, and E. Kondoh
P-2 Low Temperature ALD of Silicon Nitride Using Hydrazine-based Compound [1 TAIYO NIPPON SANSO, 2 Semiconductor National Institute for Materials Science] ○H. Murata 1, N. Tajima 2, and K. Suzuki 1
P-3 Development of novel Cu electroplating for electronic interconnects in advanced packaging [1 Kobe Univ., 2 Daicel]○T. Mahiko1,2 and M. Nagata1
P-4 Advanced Physical Modelling Method to the LSI Package Deformation with the HOG Image Feature [1 Fujitsu Laboratories, 2 Socionext] N. Itani 1 , T. Soeda 1, M. Oshima 2, and H. Matsuyama 2
P-5 Plasma-enhanced Atomic Layer Deposition of Low-k Silicon Carbonitride Films [National Chiao Tung Univ.] S.-W. Fan, Y.-L. Hsu, and J. Leu
P-6 Chip level Electromigration Evaluation using GENG estimations [The Univ. of Electro Communications] ○S. Yokogawa, K. Kunii, and R. Nakazato
P-7 Enhancement of thermal stability of NiGe films below 10 nm thickness by carbon pre-germanidation implantation [1 Chinese Academy of Sciences (IMECAS), 2 Univ. of Chinese Academy of Sciences] J. Xu1, J. Liu1, G. Wang1, X. Luo11,2, Dan Zhang1 2, S. Mao1, J. Li1, C. Zhao1,2 ,*, W. Wang1,2, B. Gao1, D. Chen1,2, T. Ye1,2, and J. Luo1,2
P-8 An optimized method for critical cleaning of sidewall residues in the fabrication of 8-inch CMOS Compatible STT-MRAM [1 Institute of Microelectronics, Chinese Academy of Sciences (IMECAS), 2 Univ. of Chinese of Academy Sciences (UCAS), 3 Beihang Univ., 4 Jiangsu Leuven Instruments] Tengzhi Yang1,2, Meiyin Yang1, Yan Cui1, Kaihua Cao3, Zongxia Guo3, Jianfeng Gao1, Xiaobin He1, Jing Xu1, Junfeng Li1, Wenwu Wang1,2, Dongchen Che4, Kaidong Xu4, Chao Zhao1,2*, Weisheng Zhao3, and Jun Luo1,2*
P-9 Cu(111) orientation control on thin TaWN alloy barrier [1Kitami Institute of Technology, 2Toray Research Center] M. B. Takeyama1, M. Sato1, and M. Yasuda2
P-10 Thermal stress relaxation of cobalt-passivated nano-twinned copper films [National Chiao Tung Univ.] H.-H. Liu, I-H. Tseng, C. Chen, and J. Leu○
P-11 Exchange coupling between perpendicular Co and IrMn interface in Pt/Co/IrMn trilayers [1 Institute of Microelectronics, Chinese Academy of Sciences (IMECAS), 2 Univ. of Chinese of Academy Sciences (UCAS)] Y. Li 1, M. Yang1*, T.i Yang1,2, Y. Cui1, J. Xu1, C. Zhao1,2, W. Wang1,2, and J. luo1,2*
P-12 Preparation of Graphene/Carbon Nanotubes Composite Films for Thermal Packaging Applications [1 Shanghai Univ., 2 Chalmers Univ. of Technology ] ○J. Xie 1 G. Yuan1 , H. Li 1 , J. Liu 1 ,2 , and Y. Tian1
P-13 Temperature induced the change of the anisotropic magnetoresistance in Co2FeAl [Chinese Academy of Sciences] ○B. Zhang, C.-L. Li, Z.-L. Huo, and K.-Y. Wang
P-14 Effect of P/B Ion Implantation after Germanidation on NiGe Films Formed on both n+- and p+-Ge [1nstitute of Microelectronics, Chinese Academy of Sciences, 2 Univ. of Chinese Academy of Sciences (UCAS)] ○X. Luo1,2, G. Wang1, J. Xu1, D. Zhang1,2, Y. Liu1,2, S. Mao1, S. Liu1, J. Li1, W. Wang1,2, D. Chen1,2, C. Zhao1,2, T. Ye1,2, and J. Luo1,2
P-15 Effects of Ammonia-based Functional Water on Copper Surface Preparation for Wafer Rinsing Step [1 Organo, 2 Nagaoka Univ. of Technology] ○D. Yano1,2 and A. Kawai2
P-16 Ultra low-k organosilica films with benzene bridge and small pore size [1 North China Univ. of Technology, 2 Technische Universit?t Chemnitz, 3 China Agricultural Univ.] C. Liu1, C. Lv1, N. Kohler2, X. Wang1, H. Lin3, Z. He3, S. Wei1#, J. Zhang1, and M. R. Baklanov1
P-17 Cu (111) preferential orientation on ZrNx films [Kitami Institute of Technology] M. Sato, and M. B. Takeyama
P-18 Metal/insulator thermally conductive layers for miniaturized planar Si-nanowire thermoelectric generator [1 Waseda Univ., 2 National Institute for Materials Science] S. Ma 1, T. Zhan 1, R. Yamato 1, M. Xu 1, H. Takezawa 1, K. Mesaki 1, M. Tomita 1, Y.-J. Wu 2, Y. Xu 2, and T. Watanabe 1
P-19 The effect of γ-ray irradiation on the SOT magnetic films and devices [1 Chinese Academy of Sciences, 2 Univ. of Chinese of Academy Sciences (UCAS)] T. Z. Yang1, W. L. Yang1(Equal contribution), C. H. Wan1, X. F. Han1*, Y. Cui1*and J. Luo1,2*
P-20 Plasma enhanced chemical vapor deposition of vertically aligned carbon nanotube arrays grown on Zinc oxide films [1Shanghai Univ., 2 Chalmers Univ. of Technology] ○H. Li 1 G. Yuan1 , J. Xie 1 , J. Liu 1,2 and Y. Tian 1
P-21 Initial changes of Cu surfaces in H2O2-BTA aqueous solutions studied by using microfluidic reactor [1 Univ. Yamanashi, 2 Ebara] ○E. Kondoh 1, M. Toyama 1, L. Jin 1, S. Hamada 2, S. Shima 2, and H. Hiayama 2
P-22 Pore Morphology of Ultra-Low-k Organosilicate Dielectrics Thin Films by UV Annealing [1National Chiao Tung Univ., 2 National Synchrotron Radiation Research Center, 3 Russian Technological Univ. (MIREA)] Y.-H. Wu1, W.-T. Chuang2, A. S. Vishnevskiy3, D. S. Seregin3, M. R. Baklanov3, K. A. Vorotilov3, and J. Leu1*
P-23 Temperature evolution of sol-gel PMO low-k films with different organic bridges [1 MIREA Russian Technological Univ (RTU MIREA), 2 North China Univ of Technology (NCUT), ] D. Seregin 1 , A. Vishnevskiy 1 , G. Orlov 1 , V. Storonkin 1 , I. Ovchinnikov 1, K. Vorotilov 1 , and M. Baklanov 1,2
P-24 Humidity Reliability of a Commercial Flash Memory for Long Term Storage [1 Shibaura Institute of Tech.(SIT), 2 Univ. of Electro Communication, 3 SIT Research Center for Green Innovation] ○T. Murota 1, T. Mimura 1, P. Gomasang 1, S. Yokogawa 2, and K. Ueno 1,3
P-25 Etching of OSG low-k film s in CF 4 plasma at different temperatures [Lomonosov Moscow State Univ.] ○A. Palov , E. Voronina , T. Rakhimova, O. Proshina, and Y. Mankelevich
P-26 Fabrication and electrical properties of Ni-based alloy thin film by electro or electroless deposition [1 Osaka Prefecture Univ., 2 Osaka Univ.] ○ M. Rindo 1, N. Okamoto 1, T. Saito 1, and A. Kitajima 2
P-27 Sputtering and etching of ethylene bridged low-k film s by neutral fluorine [1 Lomonosov Moscow State Univ., 3 North China Univ. of Technology] ○ A. Palov 1 , E. Voronina 1,2 and S. Wei 3
P-28 Effect of a metal interlayer under Au catalyst on metal-assist chemical etching of Si substrate [Kansai Univ.] ○T. Yorioka, S. Hanatani, T. Shimizu, T.i Ito, and S. Shingubara
Late News Poster
P-LN1 Interfacial Reaction of Cu6Sn5 intermetallic between molten Sn-0.7Cu-0.2Cr solder and Cu substrate [1Korea Institute of Industrial Technology, 2 Korea Univ.] J. Son1,2, D.-Y. Yu1,2, D.-J. Byun2, J. Bang1*
P-LN2 Effect of Ni3Sn2 Growth on Thermal Resistance of AuSn/ENIG Solder Joint in Flip-Chip LED Package [1 Korea Institute of Industrial Technology(KITECH), 2 Hanyang Univ.] T.-Y. Lee1,2, M.-S. Kang1, Y.-H. Kim2, S. Y.1, and ○M.-S. Kim1
P-LN3 Nitrogen Doped Amorphous Carbon as Efficient Moisture Barrier on Copper [1 Shibaura Institute of Technology , 2 SIT Research Center for Green Innovation] ○ P. Gomasang 1 , T. Murota 1 , and K. Ueno 1, 2
P-LN4 Boron diffusion and Crystal structure analysis of MTJ films with different TMR ratio according to annealing temperature [Toray Research Center] ○Y. Shimizu, M. Yasuda, and M. Nishimura
October 11, 2019
Session 1: Opening Session 2
9:30-10:10
(1-2)
Plenary: Advanced Flash Memory Technology for the Big Data Era [Western Digital Japan] A. Koike
10:10-10:20 (Break 10 min)
Session 6: Thin films and dielectrics
Chairperson: O. Nakatsuka (Nagoya Univ.)
10:20-10:50
(6-1)
Invited: Advanced Cu interconnects with Ru liner for low resistance and highly reliable 7nm BEOL technology and beyond [IBM Research] K. Motoyam
10:50-11:10
(6-2)
Formation of chemically inert interface between Al and Al3Nb thin films [Kitami Institute of Technology] M. B. Takeyama, M. Sato, and A. Noya
11:10-11:30
(6-3)
Light emission from pristine and Tb doped nanoporous organosilicate films [North China Univ. of Technology] J. Zhang*, Y. Wang, J. Zhang, H. Xu, C. Liu, S. Wei, and M. R. Baklanov
11:30-11:50
(6-4)
Investigation of Molybdenum interconnects [Fudan Univ.] ○T. Teng , and X.-P. Qu
11:50-12:50 (Break 10 min)
Session 7: 3D, TSV, PKG
Chairperson: T. Saito (Osaka Prefecture Univ.)
12:50-13:20
(7-1)
Invited: ITRI's Micro LED Development Progress for Signage, Gaming and AR Applications [Industrial Technology Research Institute (ITRI)] Y.-H. Fang
13:20-13:50
(7-2)
Invited: Low Temperature Cu-Cu Direct Bonding for 3D Integration and Advanced Packaging [National Chiao Tung Univ.] Y.-C. Tsai (on behalf of K.-N. Chen)
13:50-14:10
(7-3)
Measured Stress Comparison of Annular-Trench-Isolated (ATI) TSV with Cu and Solder Core [National Institute of Advanced Industrial Science and Technology (AIST)] ○W. Feng, N. Watanabe, H. Shimamoto, M. Aoyagi, and K. Kikuchi
14:10-14:30
(7-4)
Study of Cu pad thermal expansion effect on fine-pitch Cu-Cu hybrid bonding technology [Sony Semiconductor Solutions] ○H. Hashiguchi, M. Haneda, Y. Kagawa, M. Horiike, T. Hirano, S. Kobayashi, T. Hirano, and H. Iwamoto
14:30-14:40 (Break for Lunch)
Session 8: Next Generation Interconnect
Chairperson: A. Kajita (Toshiba Memory)
14:40-15:10
(8-1)
Invited: Non-equilibrium nanoparticle composite film process using reactive plasmas [Kyushu Univ.] K. Koga
15:10-15:30
(8-2)
Layer Number Dependence of MoCl 5 Intercalation to Few-Layer Graphene [1 Shibaura Institute of Technology, 2 KU Leuven, 3 imec] ○ E. Ketsombun 1 , X. Wu 2,3 , I. Asselberghs 3 , S. Achra 2,3 , C. Huyghebaert 3 , D. Lin 3 , Z. Tokei 3 , and K. Ueno 1
15:30-15:50
(8-3)
Vertically Stacked Suspended SiGe/Ge Nanowires Fabricated by 3D Ge Condensation for Optoelectronic Applications [Stanford Univ.] J. Suh*, Q. Li, J. van de Groep, M. Brongersma, and K. C. Saraswat
15:50-16:00 Closing Remarks:

 
 

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