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IWAPS Joint Conference

 Conference Program

October 23, 2014
Session 1: Opening Session
Chairperson: T. Nemoto (Tokyo Electron)
9:20-9:40 Opening Remarks: E. Kondoh, General Chair [Yamanashi Univ.]
Award Ceremony :
Keynotes: "Wiring, more wiring and more than wiring" - Current and future possibilities through technology development.[1CEA-LETI, 2CEA-DRT Japan Office] M. Scannell1, P. Leduc1, G. Simon1, S. Cheramy1, C. Reita1, and Y. Gallais2
Keynotes: Challenges for Thin Memory Packaging Technology [SK hynix] N. Kim, and G. Lee
11:00-11:20 (Break 20 min.)
Session 2: Metallization
Chairperson: S. Yokogawa (Polytechnic Univ.)
Invited: Metallization Challenges in 10nm and 7nm BEOL [IBM] T. Nogami
Filling and reliability performance of copper reflow process without liner layer [1Renesas Semiconductor Mfg., 2Renesas Electronics] A. Nakajima1, H. Tsuchiya2 , and Y. Yamamoto1
Reflow behavior of Cu-Mn in SiOC trench lines [Tohoku Univ.] T. Saito, D. Ando, Y. Sutou, and J. Koike
12:30-13:50 (Break for Lunch)
Session 3 : Metallization and Contact
Chairpersons: K. Maekawa (Renesas Semiconductor Mfg.) 
Invited: Characterization of vacancies and free volumes in Cu/low-k interconnects by means of positron annihilation spectroscopy [1Univ. of Tsukuba, 2AIST] A. Uedono1, N. Oshima2, and R. Suzuki2
HAST behavior of Cu-RDL in high voltage use [1Renesas Semiconductor Mafg, 2Renesas] K. Ichinose1, K. Maekawa1, K. Omori2, S. Muranaka2, M. Fujisawa2, T. Masuda2, and T. Ebara2
Invited: Stacked sputterig process for interface controlled junctions and gate formation [Tokyo Tech] K. Kakushima
Formation of Epitaxial NiGe Layer on Ge(001) Substrate and Influence of Interface Structure on Schottky Barrier Height [Nagoya Univ.] O. Nakatsuka, Y. Deng, M. Sakashita, and S. Zaima
Improvement of Contact Properties of Ytterbium Silicide by Mo Alloying [1Sungkyunkwan Univ., 2KAIST] S. Na1, J.-G. Kangg1, H. Kim1, S.-H. Lee2 , and H.-J. Lee1
15:50-16:10 (Break 20 min)
Session4 : Carbon Nanotube and Graphene
Chairpersons: S. Sato (Fujitsu Lab.), Y. Awano (Keio Univ.)
Invited: Ballistic transport in epitaxial graphene nanoribbons [Georgia Inst. of Tech.] W. de Heer
Estimation of requirements for sub-10-nm-wide graphene interconnect [1LEAP, 2Shibaura Inst. of Tech., 3Tokyo Polytechnic Univ] H. Miyazaki1, M. Katagiri1, M. Takahashi1, Y. Yamazaki1, D. Nishide1, T. Matsumoto1, M. Wada1, N. Sakuma1, K. Ueno2, R. Matsumoto3, A. Kajita1, and T. Sakai1
Monte Carlo Simulation of Graphene Nanoribbon Interconnects using Real Space Edge Roughness Model [1Keio Univ., 2LEAP] T. Misawa1, T. Okanaga1, A. Mohamad1, T. Sakai2, and Y. Awano1
Intercalated multi-layer graphene interconnects with improved uniformity in thickness and resistance [1AIST, 2Fujitsu Lab.] D. Kondo1,2, H. Nakano1, B. Zhou1, A. I1, K. Hayashi1,2, M. Takahashi1, S. Sato1,2, and N. Yokoyama1,2
CNT Via Integration with Highly Dense and Selective CNT Growth [LEAP] A. Isobayashi, M. Wada, B. Ito, T. Saito, D. Nishide, T. Ishikura, M. Katagiri, Y. Yamazaki, T. Matsumoto, M. Kitamura, M. Watanabe, N. Sakuma, A. Kajita, and T. Sakai
Poster Session (18:00-19:30)
Chairperson: O. Nakatsuka (Nagoya Univ.)
P-1 Ni films deposited by CVD using Ni precursor consisted of π-electron bonded hydrocarbon ligands, (η3-cyclohexenyl)(η5-cyclopentadienyl) nickel. [Tanaka Kikinzoku Kogyo] K. Suzuki, S. Nabeya, R. Harada, T. Shigetomi, A. Kumakura, M. Saito, T. Sone, and T. Enomoto
P-2 Selective Cu fill into nanopores using supercritical carbon dioxide [Univ. of Yamanashi] E. Kondoh, Y. Tamegai, M. Watanabe, and L. Jin
P-3 Electrochemical study of the multi-component additives behavior during copper electrodeposition with a microfluidic device and an EQCM [Osaka Pref. Univ.] Y. Tsujimoto, Y. Miyamoto, N. Okamoto, T. Saito, and K. Kondo
P-4 Preparation of a novel catalyst structure for continuous growth of nanocarbon fibers [1Univ. of Yamanashi, 2Sumitomo Electric Industries] M. Watanabe1, K. Osada1, E. Kondoh1, S. Okubo2, T. Hikata2, and A. Nakayama2
P-5 Low Temperature Interdiffusion of Cu/Ni in Supercritical Fluid Carbon Dioxide using a New Cu(I) Amidinate Precursor [1Univ. of Yamanashi, 2Gas-Phase Growth] M. Rasadujjaman1, M. Watanabe1, H. Sudoh2, H. Machida2, and E. Kondoh1
P-6 Growth of Ge Homoepitaxial films by Metal-Organic Chemical Vapor Deposition using t-C4H9GeH3 [1Meiji Univ., 2Gas-phase Growth, 3Toyota Technological Inst.] K. Suda1, S. Ishihara1, N. Sawamoto1, H. Machida2, M. Ishikawa2, H. Sudoh2, Y. Ohshita3, and A. Ogura1
P-7 Agglomeration and diffusion in Cu thin films under supercritical CO2 annealing [Univ. of Yamanashi] Y. Nakamura, M. Watanabe, and E. Kondoh
P-8 New Cu(TiIrNx) Copper-Alloy Film for Copper-Interconnect Applications [Asia-Pacific Inst. of Creativity] C.H.Lin
P-9 Synthesis of Ni precursors and their process evaluations [1Air Liquide Laboratories, 2Air Liquide Laboratories Korea, 3Air Liquide Far Eastern] S. Gatineau1, M. Kimura1, C. Ko1, C. Lansalot2, C.-F. Hsiao3, J. Yokota1, and J. Gatineau1
P-10 Fabrication of High-Thermal-Conductivity Ni/Diamond Composites by Electrodeposition [Shinshu Univ.] M. Ueda, and S. Arai
P-11 Thermal stability of bi-layered ZrN/Zr3N4 barrier in Cu/Si contact system [Kitami Inst. of Tech.] M. Sato, M. B. Takeyama, and A. Noya
P-12 Atomic layer deposited Ru thin films using H using Husing H2 molecules as a reactant; Applications to the seed layer for Cu metallizationto and bottom electrode of MIM capacitor[1Yeungnam Univ., 2Deagu Gyeonbuk inst. of Sci. & Tech., 3Korea Basic Sci. Inst., 4TANAKA Kikinzoku Kogyo, 5SK Hynix] S.-J. Lee1, M. Lee1, T. Cheon1,2, S.-H. Kim1, T. E. Hong3, M. Saito4, K. Suzukii4, S. Nabeya4, J. Lee5, S. Kim5, and S. Yeom5
P-13 Low Schottky barrier height contacts with Sn electrode for various orientation n-Ge substrates [1Nagoya Univ., 2JSPS Research Fellow] A. Suzuki1, D. Yunsheng1, S. Shibayama1,2, M. Kurosawa1,2, M. Sakashita1, O. Nakatsuka1, and S. Zaima1
P-14 Electrical Contact Property and Interfacial Reaction of Cu-Al Alloy on n-InGaAs [Tohoku Univ.] E. Lee, D. Ando, Y. Sutou, and J. Koike
P-15 An analysis of statistical characteristics of lifetime distribution based on the defect clustering for MOL/BEOL TDDB [Polytechnic Univ.] S. Yokogawa
P-16 Direct Imaging and Nano-Probing of Graphene Sheets for Interconnects by Conductive Atomic Force Microscopy [LEAP] L. Zhang, M. Katagiri, T. Ishikura, M. Wada, H. Miyazaki, Y. Yamazaki, D. Nishide, T. Matsumoto, R. Ifuku, N. Sakuma, A. Kajita, and T. Sakai
P-17 Passivation of Bromine-Doped Multilayer Graphene for Interconnect Applications [1Shibaura Inst. of Tech., 2LEAP] Y. Matsumoto1, A. Aozasa1, R. Kosugi1, H. Miyazaki2, M. Wada2, N. Sakuma2, A. Kajita2, T. Sakai2, and K. Ueno1
P-18 Magnetoresistance of conductive filament in Ni/HfO2/Pt resistive switching memory [Kansai Univ.] S. Otsuka, Y. Hamada, D. Ito, T. Shimizu, and S. Shingubara
P-19 Substrate-damage-free interconnection method for large-area flexible electronics [KIMM] J. Y. Song, J. H. Lee, J.-Y. Lee, and J. Hum
P-20 Direct Depth Measurement System of High Aspect Ratio via Holeo for 3D Stacked Device [Fujitsu] M. Nakamura, H. Kitada, and S. Sakuyama
P-21 Parametric study of the warpage and the die-shift occurs at wafer level packaging by using compression molding [1Korea Inst. of Industrial Tech., 2Seoul National Univ. of Sci. & Tech.] S.-M. Yeon1, J. Park1, N.-K. Lee1, S.-H. Park1, J.-H. Kim2, and H.-J. Lee1
P-22 Development of a High Brightness Ion Beam Extraction System for 3D-IC Metrology [1Korea Electronics-Machinery Convergence Tech. Inst., 2Seoul National Univ. of Sci. and Tech.] M.-J. Park1, W.-G. Kang2, and D.-Y. Jang2
P-23 Properties of joint by using Cu powder coated Sn metal [1Korea Inst. of Industrial Tech., 2KAIST] S. W. Kim1, Y.-H. Ko1, 2, Y.-K. Ko1, and C.-W. Lee1
P-24 Uniform pressing apparatus for temporary bonder [KIMM] C. W. Lee, J. Y. Song, T. H. Ha, J. H. Lee, and S. M. Kim
P-25 Polymer synthesis and properties of temporary bonding & debonding adhesives for 3D multichip packaging process [1Seoul National Univ., 2KIMM] S.-W. Lee1, T.-H. Lee1, J.-W. Park1, C.-H. Park1, H.-J. Kim1, S.-M. Kim2, J.-H. Lee2, and J.-Y. Song2
P-26 Polymer testing of temporary bonding & debonding adhesives for 3D multichip packaging process [1Seoul National Univ., 2KIMM] S -W. Lee1, T-H. Lee1, J.-W. Park1, C.-H. Park1, H.-J. Kim1, S.-H. Lee2, S.-M. Kim2, J.-H. Lee2, and J. -Y. Song2
P-27 Design and characterizations of temporary bonding & debonding adhesives for 3D multichip packaging process [1Seoul National Univ., 2KIMM] S.-W. Lee1, T.-H. Lee1, J.-W. Park1, C.-H. Park1, H.-J. Kim1, S.-H. Lee2, S.-M. Kim2, J.-H. Lee2, and J.-Y. Song2
P-28 Effects of pore sealing of porous SiOCH on metal penetration during CVD MnOx formation [1Tohoku Univ., 2ASM] H. Wang1, D. Ishikawa1, A. Kobayashi2, Y. Sutou1, D. Ando1, and J. Koike1
October 24, 2014 
Session 5: Dielectric and Metallization
Chairperson: Yohei Yamada (San Disk)
Invited: A Plasma assisted in situ sidewall damage restoration process for ULK dielectrics [Fraunhofer ENAS / Technische Uvin. Chemnitz] S. E. Schulz, N. Ahner, T. Fischer, N. Kohler, and S. Zimmermann
Development of low-temperature deposition of high-quality PECVD-SiN films by organo silane [1TAIYO NIPPON SANSO, 2SPP Technologies] H. Taka1, M. Yamawak1, and S. Murakami2
Novel supercritical CO2 reactor for wafer-scale deposition [1Univ. of Yamanashi, 2Fujikura] E. Kondoh1, T. Ueno1, Y. Takeuchi1, M. Watanabe1, S. Yamamoto2, and T. Suemasu2
Atomic layer deposited Ru-Mn alloy film as a Cu direct plateable diffusion barrier [1Yeungnam Univ., 2Deagu Gyeonbuk inst. of Sci. & Tech., 3Korea Basic Sci. Inst.] H.-J. Lee1, S.-J. Lee1, S. Yeo1, Y.-J., T. Cheon1,2 , T. E. Hong3, and S.-H. Kim1
Investigation of Micro-Scratches Generation Focused on the Scratches Shapes in Chemical Mechanical Polishing Process [Toshiba] A. Gawase, H. Eda, T. Kawasaki, K. Iwade, and Y. Matsui
10:50-11:10 (Break 20 min)
Session 6: Backend Device
Chairperson: Munehiro Tada ( LEAP) 
Invited: Recent Advances in CMOS Friendly RRAM and CBRM memory technologies [IMEC] L. Goux
Logic Compatible Process Technology for Embedded Atom Switches in CMOS [LEAP] K. Okamoto, M. Tada, N. Banno, N. Iguchi, T. Sakamoto, and H. Hada
Fabrication Process of Pillar-type GeTe/Sb2Te3 Super-lattice Topological Switching Random Access Memory (TRAM) [LEAP] M. Tai, M. Kinoshita, T. Ohyanagi, T. Morikawa, K. Akita, and N. Takaura
Comparative study of the ferroelectric properties employed with Al: ZnO and Sn: In2O3 electrode PbLaZrTiOx capacitors [1Osaka Pref. Univ. 2Osaka Univ.] Y. Takada1, T. Amano1, N. Okamoto1, T. Saito1, K. Kondo1, T. Yoshimura1, N.Fujimura1, K. Higuchi2, and A. Kitajima2
12:40-13:50 (Break for Lunch)
Session 7: 3D Device and Packaging 1
Chairperson: Chang Woo Lee (KITECH, Korea) 
Keynotes: 3D packaging solution based on fan-out package [nepes] Y. T. Kwon
Invited: Reliability of Cu Damascene and 3-D interconnects [1Seoul National Univ., 2Samsung Electronics] Y.-C. Joo1, H.-W. Yeon1, J.-Y. Song1, H.-A.-Seul Shin1, J.-Y. Bae2, and Y.-C. Hwang2
Effect of test structure on electromigration characteristics in 3D-TSV stacked devices [1Sony Semiconductor, 2imec] Y. Oba1, J. De Messemaeker2, A. M. Tyrovouzi2, Y. Miyamori1, J. De Vos2, T. Wang2, G. Beyer2, E. Beyne1, I. De Wolf2, and K. Croes2
A Novel Adhesive Material Development for the Bumpless WOW 3D DRAM Applications [1Tokyo Tech, 2Daicel, 3DISCO, 4Dai Nippon Printing] H. Tanaka1,2, K. Tsutsumi1,2, Y.S. Kim1,3, S. Kodama1,3, Y. Mizushima1, N. Maeda1, 3, K. Fujimoto1, 4, A. Kawai3, K. Arai3, and T. Ohba1
15:40-16:00 (Break 10 min)
Session 8: 3D Device and Packaging 2
Chairperson: Takayuki Ohba (Tokyo Tech)
Invited:Ultra Thinning of DRAM wafer for 3D WOW Application: Impact of Thinning on Retention Characteristic and Atomic Level Analysis of Backside Damage Layer [Tokyo Tech ] Y. S. Kim, S. Kodama, Y. Mizushima, N. Maeda, K. Fujimoto, T. Nakamura, A. Kawai, K. Arai, and T. Ohba
Direct observation of fluorocarbon and Al contamination on the TSV side-wall and benchmarking the cleaning methods of process residue [Fujitsu Semiconductor] H. Ohira, T. Owada, H. Ochimizu., and M. Miyajima
Reliability Studies of Copper Wire Bonds on a Novel Over Pad Metallization [1Renesas Semiconductor Package &Test Solutions, 2Renesas Semiconductor Mfg.] F. Kawashiro1, S. Itoh2, T. Maeda1, T. Hirose1, A. Yajima2, and T. Etoh1
Effects of Ti interlayer on intermetallic compound (IMC) formation and growth for joint reliability of 3D-TSV package [1KITECH, 2Tohoku Univ., 3KAIST] Y.-K. Ko1,2, Y.-H. Ko1,3, S.-W. Kim1, and C.-W. Lee1
Study on the Micro-Structure of ISB Bonding Specimens w.r.t. Bonding Parameters [KIMM] J. H. Lee, J. Y. Song, Y. K. Lee, S. M. Kim, T. H. Ha, and C. W. Lee
Laser assisted EZR debonding technology for 3D-TSV packaging process [1KIMM, 2Seoul National Univ.] S.-M. Kim1, J.-H. Lee1, S.-H. Lee1, J.-Y. Song1, C.-W. Lee1, T.-H. Ha1, H.-J. Kim2, and S.-W. Lee2
18:10-18:20 Closing Remarks:


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